SI2301BDS-T1-E3

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SI2301BDS-T1-E3 is a single N-channel enhancement mode or enhancement type vertical double diffused MOSFET (VDMOSFET) which is a type of a field effect transistor (FET). This type of transistor is a three terminal integrated circuit component which operates by the principle of the metal oxide semiconductor field-effect transistor. The SI2301BDS-T1-E3 is designed for low loss, high voltage switching applications.

The SI2301BDS-T1-E3 has a package size of TO-220F-3L, which is also referred to as a three-leaded TO-220 package. These packages are commonly used in high-current and high-voltage applications because of their low internal resistance, which reduces power dissipation and increases the operating efficiencies.

This device has a drain-source breakdown voltage, commonly known as the BVDSS, of 100V with an on-resistance, or RDS(ON), of 14 milliohms maximum at an operating temperature of 25°C. The SI2301BDS-T1-E3 has a maximum power dissipation of 50W and a maximum junction temperature of 150°C. This high voltage, low RDS(ON) MOSFET is commonly used in DC-DC converter, motor control, and power switch applications.

The Metal-Oxide Semiconductor (MOSFET) technology used to construct the SI2301BDS-T1-E3 also allows for lower gate capacitance and power dissipation. The lower gate capacitance reduces the switching time and increases the switching losses, thus improving the device’s performance. The lower power dissipation ensures that the device is capable of operating safely in higher current and higher voltage applications.

Aside from the low on-resistance and power dissipation, the SI2301BDS-T1-E3 also has a noise immunity threshold of 0.3V. This noise immunity threshold is useful when the device is used in applications where large amounts of electromagnetic interference (EMI) is present.

The SI2301BDS-T1-E3 is typically used in low loss, high voltage switching applications. It is used in applications such as DC-DC converters, motor control, power switches, and power supplies. The device is also widely used in automotive, industrial, and consumer electronic applications.

The operating principle of the SI2301BDS-T1-E3 can be divided into two components. The first component is the gate threshold voltage, or VGS. The voltage between the gate terminal and the source terminal will control the device’s current flow. This voltage must be greater than the gate threshold voltage in order for the device to operate.

The second component is the drain-to-source voltage, or VDS. This voltage controls the amount of current that will flow through the device. When the voltage between the drain terminal and the source terminal is greater than the BVDSS, the device will begin to increase its current flow. Depending on the voltage applied to the gate terminal, the amount of current through the device will be controlled.

The SI2301BDS-T1-E3 is a high voltage, low RDS(ON) MOSFET that is used in a variety of applications requiring high levels of performance. The device is capable of operating in extreme environments with noise immunity thresholds up to 0.3V, low gate capacitance for fast switching times, and low power dissipation for improved operating efficiencies.

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