SI2308DS-T1-E3

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.25W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	240pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	10nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	160 mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	--
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Overview

The SI2308DS is a single N-channel silicade-oxide-nitride field effect transistor (SiON FET) manufactured by Vishay. This MOSFET offers an extremely low on-resistance of 8 mohm at 4.5 V and an avalanche energy rating of 6 mJ. This device is suitable for dc-dc converter and switching regulator applications.

Application Fields

The SI2308DS-T1-E3 offers many advantages for its users. It is able to provide high speed switching due to its low gate charge and low input/output capacitance. It is also able to increase efficiency and reduce EMI noise. The device is ideal for applications such as step-down, boost and buck converters, as well as other switch-mode power supplies. It can also be used in current sensing applications.

Features

The SI2308DS-T1-E3 offers several features that make it an ideal choice for applications. It offers fast switching speed, with an on-resistance of 8 mohm at 4.5 V and di/dt of 2.5 A/µs. It also comes with ESD protection, UVLO protection and an avalanche energy rating of 6 mJ. Furthermore, it has a drain-source breakdown voltage of 100 V and a maximum drain current of 28 A.

Working Principle

The SI2308DS-T1-E3 is an N-channel MOSFET. It works by controlling the voltage across its drain and source terminals. When a voltage is applied to the gate terminal, electrons are attracted to the oxide-nitride-oxide insulating layer, resulting in an inversion layer at the channel. This inversion layer acts as a conductive path between the drain and source terminals, allowing current to flow. When the voltage to the gate terminal is removed, the inversion layer disappears, turning off the device.

Conclusion

The SI2308DS-T1-E3 is an ideal choice for dc-dc converters, switch-mode power supplies and current sensing applications. It offers fast switching speed and high current carrying capabilities, as well as ESD and UVLO protection. By understanding its features and working principle, users can maximize the benefits of the SI2308DS-T1-E3 for their applications.

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