SI2331DS-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI2331DS-T1-GE3-ND

Manufacturer Part#:

SI2331DS-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 12V 3.2A SOT23-3
More Detail: P-Channel 12V 3.2A (Ta) 710mW (Ta) Surface Mount S...
DataSheet: SI2331DS-T1-GE3 datasheetSI2331DS-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 900mV @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 710mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 48 mOhm @ 3.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI2331DS-T1-GE3 What is a MOSFET (metal oxide semiconductor field-effect transistor)? It is a type of transistor that can be used to switch electrical signals from one circuit to another. It is a three-terminal device that uses electric fields to control the flow of electrical current. The SI2331DS-T1-GE3 MOSFET is a low gate charge, low on-resistance insulated gate bipolar transistor (IGBT) that is also commonly referred to as an enhancement mode MOSFET.

The device is designed for use in DC relays, high current switches, converter and inverter applications. It is constructed with a silicon-based p-type MOSFET chip and a metal oxide semiconductor (MOS) dielectric layer. The device has an integrated metal gate and a highly conductive polysilicon electrode. The gate is integrated with an insulated gate bipolar transistor (IGBT) to provide higher gate-to-source voltage.

The SI2331DS-T1-GE3 offers an increased current density compared to conventional MOSFETs. The device features a low conduction loss which makes it suitable for use in DC relays, motor control and power switches, as well as DC to AC converters and inverters. The device also has a low gate charge which ensures that the switching time of the device is minimized.

The working principle of the device is relatively simple. When the gate-to-source voltage of the device is increased above a certain level, it begins to conduct electric current from the drain to the source. The amount of current that flows through the device is proportional to the gate-to-source voltage. The gate voltage determines the resistance of the device. This means that the device can be used to control the current flow in the circuit by varying the gate voltage.

The SI2331DS-T1-GE3 MOSFET is a versatile device that can be used in a wide range of power electronics applications. The device is well suited for use in DC relays, high current switches, converter and inverter applications. It is also suitable for power applications such as DC to AC converters and inverters. The device is highly reliable, efficient and easy to use.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SI23" Included word is 40
Part Number Manufacturer Price Quantity Description
SI2305ADS-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 8V 5.4A SOT23...
SI2351DS-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 2.8A SOT2...
SI2305ADS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 8V 5.4A SOT23...
SI2335DS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 12V 3.2A SOT2...
SI2392DS-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 3.1A SOT...
SI2333-TP Micro Commer... 0.06 $ 1000 P-CHANNEL MOSFET, SOT-23 ...
SI2319DDS-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CHAN 40VP-Channe...
SI2304DS,215 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 30V 1.7A SOT2...
SI2302DS,215 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 20V 2.5A SOT2...
SI2303BDS-T1 Vishay Silic... -- 1000 MOSFET P-CH 30V 1.49A SOT...
SI2343DS-T1 Vishay Silic... -- 1000 MOSFET P-CH 30V 3.1A SOT2...
SI2302ADS-T1 Vishay Silic... -- 1000 MOSFET N-CH 20V 2.1A SOT2...
SI2323DS-T1 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 3.7A SOT2...
SI2327DS-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 200V 0.38A SO...
SI2302ADS-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 20V 2.1A SOT2...
SI2303BDS-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 30V 1.49A SOT...
SI2311DS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 8V 3A SOT23P-...
SI2311DS-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 8V 3A SOT23P-...
SI2321DS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 20V 2.9A SOT-...
SI2321DS-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 2.9A SOT-...
SI2331DS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 12V 3.2A SOT2...
SI2331DS-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 12V 3.2A SOT2...
SI2335DS-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 12V 3.2A SOT2...
SI2341DS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 30V 2.5A SOT-...
SI2341DS-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 30V 2.5A SOT-...
SI2302ADS-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 20V 2.1A SOT2...
SI2303BDS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 30V 1.49A SOT...
SI2305DS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 8V 3.5A SOT23...
SI2308DS-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 60V 2A SOT23-...
SI2309DS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 60V 1.25A SOT...
SI2327DS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 200V 0.38A SO...
SI2351DS-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 2.8A SOT2...
SI2309CDS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 60V 1.6A SOT2...
SI2343DS-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 30V 3.1A SOT-...
SI2323DS-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 3.7A SOT2...
SI2319DS-T1-GE3 Vishay Silic... 0.22 $ 1000 MOSFET P-CH 40V 2.3A SOT2...
SI2337DS-T1-GE3 Vishay Silic... -- 3000 MOSFET P-CH 80V 2.2A SOT2...
SI2301BDS-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 20V 2.2A SOT2...
SI2356DS-T1-GE3 Vishay Silic... 0.09 $ 1000 MOSFET N-CH 40V 4.3A SOT-...
SI2333DDS-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 12V 6A SOT23P...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics