Allicdata Part #: | SI2331DS-T1-GE3-ND |
Manufacturer Part#: |
SI2331DS-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 12V 3.2A SOT23-3 |
More Detail: | P-Channel 12V 3.2A (Ta) 710mW (Ta) Surface Mount S... |
DataSheet: | SI2331DS-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 710mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 780pF @ 6V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 48 mOhm @ 3.6A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.2A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI2331DS-T1-GE3 What is a MOSFET (metal oxide semiconductor field-effect transistor)? It is a type of transistor that can be used to switch electrical signals from one circuit to another. It is a three-terminal device that uses electric fields to control the flow of electrical current. The SI2331DS-T1-GE3 MOSFET is a low gate charge, low on-resistance insulated gate bipolar transistor (IGBT) that is also commonly referred to as an enhancement mode MOSFET.
The device is designed for use in DC relays, high current switches, converter and inverter applications. It is constructed with a silicon-based p-type MOSFET chip and a metal oxide semiconductor (MOS) dielectric layer. The device has an integrated metal gate and a highly conductive polysilicon electrode. The gate is integrated with an insulated gate bipolar transistor (IGBT) to provide higher gate-to-source voltage.
The SI2331DS-T1-GE3 offers an increased current density compared to conventional MOSFETs. The device features a low conduction loss which makes it suitable for use in DC relays, motor control and power switches, as well as DC to AC converters and inverters. The device also has a low gate charge which ensures that the switching time of the device is minimized.
The working principle of the device is relatively simple. When the gate-to-source voltage of the device is increased above a certain level, it begins to conduct electric current from the drain to the source. The amount of current that flows through the device is proportional to the gate-to-source voltage. The gate voltage determines the resistance of the device. This means that the device can be used to control the current flow in the circuit by varying the gate voltage.
The SI2331DS-T1-GE3 MOSFET is a versatile device that can be used in a wide range of power electronics applications. The device is well suited for use in DC relays, high current switches, converter and inverter applications. It is also suitable for power applications such as DC to AC converters and inverters. The device is highly reliable, efficient and easy to use.
The specific data is subject to PDF, and the above content is for reference
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