SI2311DS-T1-E3

Vgs(th) (Max) @ Id:	800mV @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	710mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	970pF @ 4V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	12nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	45 mOhm @ 3.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	3A (Ta)
Drain to Source Voltage (Vdss):	8V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IntroductionThe SI2311DS-T1-E3 is a product of Vishay Intertechnology that belongs to the Transistors - FETs, MOSFETs - Single categorization. This compact and easy-to-use device is a Mouser branded device that has a great number of application fields and a working principle that has been very successful in many instances. Application field of SI2311DS-T1-E3The SI2311DS-T1-E3 is a MOSFET (metal-oxide-semiconductor field-effect transistor) that can be used in many electronic applications, including power converters, converters, switching, lighting circuits, and other power supply applications. It features low on-resistance and noise, as well as a fast switching time. The SI2311DS-T1-E3 is also useful in applications where low EMI (electromagnetic interference) and ESD (electrostatic discharge) protection is required. The device possesses advanced thermal protection, which guards against current overshoots and providing high reliability and long lifetime of the product. In summary, its low on-resistance, high speed switching, low EMI and ESD protection, and thermal shock resistance make it a great choice for many electronic applications. Working Principle of SI2311DS-T1-E3The working principle of the SI2311DS-T1-E3 is based on its structure as a MOSFET. The transistor is composed of two regions, namely a source and a drain. In between them, there is a channel of semiconductor material. A voltage applied to the gate of the transistor controls the flow of current through the channel and the switch between on and off states. By controlling the application of the gate voltage, the current through the transistor can be controlled. The device uses vertical power MOSFETs, which have the largest source-channel junction area, offering a lower on-resistance than conventional transistors. This, coupled with its high current-handling capability, allows it to switch rapidly and efficiently, providing an effective solution to a variety of power supply applications. ConclusionThe SI2311DS-T1-E3 is a great device for many electronic applications such as power converters, converters, switching, lighting circuits, and other power supply applications. Its low on-resistance, fast switching, and thermal protection are the major advantages of using the device. Additionally, its efficient working principle based on the MOSFET structure makes it an effective solution that can be used for many applications.

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