Allicdata Part #: | SI2305ADS-T1-E3TR-ND |
Manufacturer Part#: |
SI2305ADS-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 8V 5.4A SOT23-3 |
More Detail: | P-Channel 8V 5.4A (Tc) 960mW (Ta), 1.7W (Tc) Surfa... |
DataSheet: | SI2305ADS-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 800mV @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Mounting Type: | Surface Mount |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Power Dissipation (Max): | 960mW (Ta), 1.7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 740pF @ 4V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 4.1A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.4A (Tc) |
Drain to Source Voltage (Vdss): | 8V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI2305ADS-T1-E3 is a N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is designed to provide high-speed switching. It is made of silicon as its main semiconductor material, and aqua blue as its lead (Pb) free package color. It offers excellent performance characteristics, such as low RDS(on), low gate charge, low input capacitance and fast switching speed. It is available in a variety of case sizes, making it suitable for applications that require a wide range of current-handling capabilities. The SI2305ADS-T1-E3 is a great choice for switching applications, such as power management and dynamic load control.
The working principle of metal oxide semiconductor field effect transistors (MOSFETs) is based on the transferring of charge carriers across a conducting field-effect surface. Basically, it is a three-terminal integrated circuit that uses a metal-oxide-semiconductor (MOS) structure to form the input to output conduction path. In the SI2305ADS-T1-E3, two metal-oxide regions are fabricated into the p-type silicon substrate. The layer closest to the source is typically doped with boron and forms the source terminal. The second layer is typically doped with phosphorus, and forms the drain terminal. The gate terminal is insulated from the rest of the device, and is used to control the current flow between the source and the drain.
The SI2305ADS-T1-E3 has a variety of applications, ranging from automotive to consumer electronics and many more. In the automotive industry, it is often used in power management systems, such as electronic fuel injection, emission control, and engine control systems. It can also be used in battery charging systems, as well as in vehicle entertainment systems and alarms. In consumer electronics, they are often used in switching applications, such as dynamic load control and circuit protection. Additionally, they are widely used in industrial applications, such as motor control and industrial process control.
The fast switching characteristics of the SI2305ADS-T1-E3 makes it an ideal choice for applications that require a high degree of reliability and accuracy. Additionally, its low power consumption makes it a great option for power management applications. Moreover, the wide range of current-handling capabilities of the SI2305ADS-T1-E3 make it a great option for applications that require high-speed switching. Overall, the SI2305ADS-T1-E3 is a great choice for a variety of applications, including automotive, consumer electronics, and industrial applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SI2305ADS-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 8V 5.4A SOT23... |
SI2351DS-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 2.8A SOT2... |
SI2305ADS-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 8V 5.4A SOT23... |
SI2335DS-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 12V 3.2A SOT2... |
SI2392DS-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 3.1A SOT... |
SI2333-TP | Micro Commer... | 0.06 $ | 1000 | P-CHANNEL MOSFET, SOT-23 ... |
SI2319DDS-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CHAN 40VP-Channe... |
SI2304DS,215 | Nexperia USA... | 0.0 $ | 1000 | MOSFET N-CH 30V 1.7A SOT2... |
SI2302DS,215 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 20V 2.5A SOT2... |
SI2303BDS-T1 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 1.49A SOT... |
SI2343DS-T1 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 3.1A SOT2... |
SI2302ADS-T1 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 2.1A SOT2... |
SI2323DS-T1 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 3.7A SOT2... |
SI2327DS-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 200V 0.38A SO... |
SI2302ADS-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 2.1A SOT2... |
SI2303BDS-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 1.49A SOT... |
SI2311DS-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 8V 3A SOT23P-... |
SI2311DS-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 8V 3A SOT23P-... |
SI2321DS-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 2.9A SOT-... |
SI2321DS-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 2.9A SOT-... |
SI2331DS-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 12V 3.2A SOT2... |
SI2331DS-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 12V 3.2A SOT2... |
SI2335DS-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 12V 3.2A SOT2... |
SI2341DS-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 2.5A SOT-... |
SI2341DS-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 2.5A SOT-... |
SI2302ADS-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 2.1A SOT2... |
SI2303BDS-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 1.49A SOT... |
SI2305DS-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 8V 3.5A SOT23... |
SI2308DS-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 2A SOT23-... |
SI2309DS-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 1.25A SOT... |
SI2327DS-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 0.38A SO... |
SI2351DS-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 2.8A SOT2... |
SI2309CDS-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 1.6A SOT2... |
SI2343DS-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 3.1A SOT-... |
SI2323DS-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 3.7A SOT2... |
SI2319DS-T1-GE3 | Vishay Silic... | 0.22 $ | 1000 | MOSFET P-CH 40V 2.3A SOT2... |
SI2337DS-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET P-CH 80V 2.2A SOT2... |
SI2301BDS-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 2.2A SOT2... |
SI2356DS-T1-GE3 | Vishay Silic... | 0.09 $ | 1000 | MOSFET N-CH 40V 4.3A SOT-... |
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