SI2323DS-T1

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A metal-oxide-semiconductor field-effect transistor (MOSFET), also known as an insulated-gate field-effect transistor (IGFET), is a field-effect transistor with a gate insulated from the body by an insulating layer of metal oxide. The SI2323DS-T1 is a single-channel, or single-gate MOSFET, designed for low-side, high-side and common-gate applications. It is a fast switching, low-voltage, low-current device, commonly used in power-switching, gate-drive and driver circuits.

The SI2323DS-T1 is composed of three terminals: a drain, an insulated gate and a source. The drain and source are connected to the device’s power supply and load, such as a DC motor or load resistor, respectively. The insulated gate is the control terminal of the device, and is connected to a voltage source that controls the drain-source current flow. To turn on the device, the gate-source voltage needs to be higher than the threshold voltage, or “Vth”.

The SI2323DS-T1 has two distinct states; either “on” or “off”. In its “off” state, the drain-source channel is reverse-biased, thereby preventing current flow. In order to open the channel, the controlling gate voltage must be raised enough to drive the drain-source voltage below its threshold voltage, allowing current to freely flow between the drain and source. If a negative gate voltage is applied, it can also reverse-bias the channel, preventing current from flowing.

The SI2323DS-T1 is commonly used in DC motor speed control, power switching, switching power supplies, computer power supplies, high-side Gate-Drive and level translation circuits, and load-line applications.

One of the primary advantages of SI2323DS-T1 MOSFET is its low “on-resistance”, or RDS(on). This parameter is controlled by the gate voltage and is used to define the amount of current it can handle. Compared to other MOSFETs with the same package, the SI2323DS-T1 offers an extremely low RDS(on) of 30μA at 4.5V. This allows it to handle a wide range of applications where high current switching is required.

The SI2323DS-T1 is also designed for low-output capacitance, low-inductance, and low gate-coupling resistance. Other features include wide temperature range from -40°C to +125°C, ESD tolerance of ±2kV (Human Body Model), and RoHS compliance.

In summary, the SI2323DS-T1 MOSFET is a low-power, low-voltage device ideal for a variety of applications, including DC motor speed control, power switching, switching power supplies, computer power supplies, and Gate-Drive and level translation circuits. Its low on-resistance makes it a popular choice in many applications demanding high current switching.

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