SI2319DS-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SI2319DS-T1-GE3 is a type of field-effect transistor (FET), specifically one of single MOSFETs. MOSFETs are a type of FETs that use metal-oxide-semiconductor (MOS) technology. They are typically used in switching, amplifier and digital logic applications. Here we present an overview of the SI2319DS-T1-GE3, its application field and working principle.

Description

The SI2319DS-T1-GE3 is an enhancement- mode, N-channel MOSFET transistor in an 8-pin,surface-mount plastic dual in-line package (DIP). It has a maximum current rating of 1.5A, and a maximum voltage rating of 30V. It is rated for operating temperatures up to 150C and offers an excellent level of on-state resistance (RDS(ON)).

Application Field

The SI2319DS-T1-GE3 is most often used as a switch, allowing a wide range of digital logic applications. Its low on-state resistance offers improved efficiency when switching. Its wide voltage and current ratings, high temperature range and small package footprint make it an ideal choice for applications which require high power switching in a small form factor. These include automotive, aviation and railway applications, industrial control and home automation, as well as a range of consumer electronics.

Working Principle

The SI2319DS-T1-GE3 is a four-terminal semiconductor device that operates on principle of field-effect. A voltage applied to the Gate terminal of the transistor allows current to flow between the Source and Drain terminals. When the Gate is off, current will not flow and the transistor is said to be in its "Off" state. When the Gate is on, current will begin to flow, and the transistor is said to be in its "On" state. The amount of current that can flow through the transistor is determined by its drain-source voltage and its gate voltage.

An important feature of the transistor is its on- gate resistance, or RDS(ON). This is the amount of resistance between the source and drain while the gate is turned on. The SI2319DS-T1-GE3 offers excellent RDS(ON), allowing for improved efficiency in switching applications.

Conclusion

The SI2319DS-T1-GE3 is a type of single MOSFET transistor. It offers an excellent level of on-state resistance (RDS(ON)), and its wide voltage and current ratings, high temperature range and small package footprint make it an ideal choice for high power switching applications. The SI2319DS-T1-GE3 is most often used as a switch in digital logic applications, and can also be used in amplifiers and general purpose switching applications.

The specific data is subject to PDF, and the above content is for reference