SI2319DDS-T1-GE3

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1W (Ta), 1.7W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	650pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	19nC @ 10V
Series:	TrenchFET® Gen III
Rds On (Max) @ Id, Vgs:	75 mOhm @ 2.7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	2.7A (Ta), 3.6A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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SI2319DDS-T1-GE3 is a high-performance MOSFET from Vishay Siliconix. It is designed for high-speed switching applications, and its advanced CMOS technology enables it to operate with low gate-to-source capacitance, high input impedance, low on-state resistance, and low gate-threshold voltage. The device also features a fast turn-on and turn-off time and excellent power handling capabilities.The device belongs to a family of FETs (Field Effect Transistors) which are used to switch or amplify signals. These devices consist of three terminals - the source, gate, and drain - and their operation depends on the flow of carriers or charge between the source and drain, which occurs when the gate is activated by a voltage signal.In the case of the SI2319DDS-T1-GE3, the device has an enhancement type MOSFET which means that the gate must be driven with a positive voltage to enable it. The gate–source capacitance is extremely low, allowing the device to switch quickly and accurately. The on-state resistance is also almost zero, meaning the device has a low power demand.This device is ideal for many applications including switching converters, RF amplifiers, and high voltage or high current DC to DC converters. It is also suitable for automotive power electronics applications such as alternators, Electronic Power Steering (EPS), and other motor control applications.Another key feature of this device is its low threshold voltage. This makes it especially suitable for applications where low voltage signals are used to switch on the device. The device has excellent ESD protection and is capable of handling high voltage transients, making it suitable for applications with demanding switching or surge protection requirements.In addition, the device has a low on-state leakage current, making it ideal for low-power applications. This means that it is efficient and does not require large heat sinks to dissipate excess heat. Furthermore, its tight on-resistance distribution ensures a uniform drain voltage regardless of the load conditions.Overall, the SI2319DDS-T1-GE3 is a highly efficient device that is suitable for many high-speed switching and amplifying applications. Its advanced CMOS technology and low gate-to-source capacitance, high input impedance and low on-state resistance make it an ideal choice for any high current or low voltage switching application. Its low power demand and low on-state leakage also make it highly efficient and suitable for energy-saving and low-power applications. Its excellent ESD protection and suitability for surge protection requirements make it an ideal choice for automotive and industrial applications.

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