Allicdata Part #: | SI2302ADS-T1-ND |
Manufacturer Part#: |
SI2302ADS-T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 2.1A SOT23-3 |
More Detail: | N-Channel 20V 2.1A (Ta) 700mW (Ta) Surface Mount S... |
DataSheet: | SI2302ADS-T1 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.2V @ 50µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 700mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 300pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 3.6A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.1A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI2302ADS-T1 is a type of JFET (Junction Field-Effect Transistor), which is a three-terminal device that is composed of two closely spaced P-type and N-type semiconductor zones, usually referred to as the source and the drain. The N-type material is embedded in the middle of the source and the drain and known as the gate. The SI2302ADS-T1 is a single-ended, self-biased part, making it easy to design with since no gate biasing is needed. The device is designed to operate at a high current density, resulting in a low on-resistance, less gate drive to on-state, and low gate charge.
The principle of operation of the SI2302ADS-T1 is the same as that of other JFETs: the negative charges on the gate repel the majority carriers (electrons in this case) from the source region. This means that carrier injection from the source is inhibited, resulting in a low drain- to-source current (IDS) for any gate-to-source voltage (VGS). The SI2302ADS-T1 also has the advantages of being a low gate threshold device.
The SI2302ADS-T1 has a variety of application fields, including power management, audio, switching, and motor control. In power management applications, it is used as a switch that controls the flow of current between the source and the drain. This is especially useful in applications where low on-resistance and high power density is required. It is also commonly used in audio applications, such as guitar amplifiers, as it is capable of producing distortion effects. It is also used in motor control applications such as switching of DC motors and speed control by switching the load current.
The working principle of the SI2302ADS-T1 is very simple. It is a three-terminal device that uses a gate-to-source voltage to control the current flow between the source and the drain. The operation starts when a negative voltage is applied to the gate, which repels the majority carriers from the source region, resulting in a low drain-to-source current. When an appropriate gate voltage is applied, the device is in its off-state and the current flow between the source and the drain is zero.
In conclusion, the SI2302ADS-T1 is a single-ended, self-biased JFET that is designed to operate at high current densities. It is a versatile device that is used in a variety of power management, audio, switching, and motor control applications. Its working principle is simple: the current flow between the source and the drain is controlled by a gate-to-source voltage.
The specific data is subject to PDF, and the above content is for reference
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