Allicdata Part #: | SI2323DS-T1-GE3TR-ND |
Manufacturer Part#: |
SI2323DS-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 3.7A SOT23-3 |
More Detail: | P-Channel 20V 3.7A (Ta) 750mW (Ta) Surface Mount S... |
DataSheet: | SI2323DS-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 750mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1020pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 39 mOhm @ 4.7A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.7A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
Description
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The SI2323DS-T1-GE3 is a N-Channel 30V (D-S) MOSFET used in power management in a variety of applications. It has excellent switch performance with low threshold voltage and low input capacitance. This device is capable of high frequency switching in a smaller package size, which makes it suitable for various applications. In this article, we will discuss the application field and working principle of the SI2323DS-T1-GE3.
The SI2323DS-T1-GE3 is suitable for use in power management applications such as motor controls, DC-DC converters, switching regulators, motor drivers, Robotics, HVAC, solar power, and other power control systems. In addition, it is also used in consumer electronics applications such as audio amplifiers, consumer audio, high-end audio, and home theater. The SI2323DS-T1-GE3 can also be used in other industries such as aerospace, automotive, military, and telecom.
The SI2323DS-T1-GE3 is an N-Channel MOSFET with a 30V main power supply and low on-state resistance. It is designed to switch both AC and DC loads with low losses and high efficiency. The device has a low threshold voltage which enables it to efficiently switch even low voltage loads. It features an input capacitance of 7.5pF and a maximum drain-source voltage of 30V. It also has a maximum drain current of 9.4 A and a maximum power dissipation of 4.1 W. Finally, it has a maximum switching frequency of 2 MHz and a threshold voltage of -2V.
The working principle of the SI2323DS-T1-GE3 is relatively simple. It works by allowing or disallowing the flow of electrons from the source to the drain. This is done with the help of a gate which acts as a switch. When the gate is open, electrons can flow freely from the source to the drain. When the gate is closed, the electrons are not allowed to pass and the flow of current is blocked. This is how the SI2323DS-T1-GE3 works in order to provide power control and management.
The SI2323DS-T1-GE3 is an efficient and reliable power management device capable of high frequency switching in a smaller package size. It is suitable for a variety of applications such as motor controls, DC-DC converters, switching regulators, motor drivers, Robotics, HVAC, solar power, and other power control systems. It features a low threshold voltage and low input capacitance, making it an ideal choice for efficient power control in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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