SI3402-TP

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The SI3402-TP is a large-area high-voltage dual N-channel enhancement-mode field-effect transistor (FET) designed for ultra-low on-state losses and high switching speed. In the modern automotive, consumer, and industrial markets, this transistor provides a reliable and economical solution for a wide range of applications commercially available.

A FET is a semiconductor that controls the flow of electric current by using a voltage as an input. It is also called a voltage-controlled device because its output is dependent on the applied voltage. It is typically used as a switch, allowing an easy and efficient way to control the flow of an electric current. FETs have been used in data acquisition and control systems, medical applications, aerospace, and consumer electronics.

The SI3402-TP is a high-voltage dual N-channel enhancement mode field-effect transistor. The device has two N-channel FETs and is designed for use at a drain-source voltage of up to 500V. It features ultra low on-state losses, low gate charge, fast switching speed and high insulation/isolation voltage levels. The transistor also has excellent positive temperature coefficient (PTC) of the on-state drain current, providing over-temperature protection for the device.

The transistor can be used in a range of automotive, consumer, and industrial applications. It is particularly well suited to applications requiring high levels of efficiency and power, such as software-controlled switch-mode power supplies and motor drive systems. The device can also be used in applications requiring a low-level on-state resistance, such as switch-mode lighting, SMPS, and high-frequency motor drives.

The working principle of the SI3402-TP is based on the ability of the device to control the current through the channel. When a gate voltage is applied, it induces a flow of charge carriers in the channel. This electric field is a result of the applied electric field in the channel, which is then modulated by the electric field of the gate. This in turn causes the channel to become conductive, thus allowing current to flow through the device.

In conclusion, the SI3402-TP provides a reliable and economical solution for a wide range of applications in the modern automotive, consumer, and industrial markets. The device has two N-channel FETs and is designed for use at a drain-source voltage of up to 500V, featuring ultra low on-state losses, low gate charge, fast switching speed and high insulation/isolation voltage levels. Its working principle is based on the ability of the device to control the current through the channel.

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