Allicdata Part #: | SI3456CDV-T1-E3-ND |
Manufacturer Part#: |
SI3456CDV-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 7.7A 6TSOP |
More Detail: | N-Channel 30V 7.7A (Tc) 2W (Ta), 3.3W (Tc) Surface... |
DataSheet: | SI3456CDV-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 7.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 34 mOhm @ 6.1A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 460pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Ta), 3.3W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-TSOP |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
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The SI3456CDV-T1-E3 is a type of Field Effect Transistor (FET). FETs are three-terminal semiconductor devices that are used to amplify and switch electronic signals, and are primarily composed of a channel of n-type or p-type semiconducting material, which is formed by dopants that alter the electrical properties of the semiconductor. This type of transistor is a single MOSFET (insulated gate field effect transistor), which are used in applications such as power management, analog signal conditioning, and DC/DC converters. The SI3456CDV-T1-E3 is typically used in applications involving relatively high voltage (typically up to 55 volts) and relatively high current (typically up to 14 amps).
The SI3456CDV-T1-E3 has two main terminals, the drain and the source, and one gate. The gate is usually coupled to a voltage or current source allowing it to be operated as an amplifier or a switch. When a positive voltage is applied to the gate, a layer of electrons accumulates on the surface of the channel and forms a conducting path between the source and drain. This allows current to flow between these terminals and is the operating principle behind the SI3456CDV-T1-E3. When the voltage is removed, the conduction path is broken and current flow stops.
The SI3456CDV-T1-E3 is a highly efficient voltage and current regulator, suitable for use in a wide variety of applications. It can be used in power supply and motor control circuits, as well as in high frequency switching applications such as switching power amplifiers and RF circuits. The SI3456CDV-T1-E3 is also an excellent choice for digital logic applications, as it is capable of switching large currents with very low gate-source and gate-drain leakage currents.
The SI3456CDV-T1-E3 is a voltage-controlled device and its characteristics can be easily adjusted by changing the gate voltage or current. The maximum drain current and drain-source voltage can be adjusted from zero to the maximum value given in the device data sheet. The SI3456CDV-T1-E3 has an improved linearity compared to other FETs, making it more suitable for high-fidelity amplification applications. The device also has a low level of gate-drain capacitance, which allows it to operate with higher switching speeds and better operating bandwidth.
The SI3456CDV-T1-E3 is available in a wide range of packages, and it is typically used in applications such as DC/DC and AC/DC converters, switch mode power supplies, motor control, digital logic, and analog circuits. The device has a low on-resistance and a low gate input capacitance and is designed for low power consumption and low noise operation, making it suitable for a wide range of applications. The SI3456CDV-T1-E3 is also a reliable device, with excellent long-term reliability.
The specific data is subject to PDF, and the above content is for reference
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