SI3443DVTR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI3443DVTR is a Transistors – FETs, MOSFETs – Single device that is used in various applications and is manufactured by Texas Instruments. This MOSFET device is a dual N-channel MOSFET transistor that is used in a variety of electronic applications. It has a very low ability to act as a static switch between two precision supply voltages and can withstand signal level transient voltages of up to 20Vp-p. The SI3443DVTR can also be used to provide precision current limiting. It has a wide VGS range of -4.5V to 4.5V and a low on resistance of 4 Ω. The SI3443DVTR is a very versatile device that can be used in a variety of applications, such as: switching power supplies, port protection, and current limiting circuits.

The SI3443DVTR is a dual N-channel, high-performance MOSFET transistor. It is designed to provide low on resistance in a small package size. This device is capable of switching large currents with low losses. It has a breakdown voltage of 20V, which makes it suitable for high voltage applications. It is also capable of operating at high frequencies, making it suitable for high speed applications. The wide range of VGS makes it suitable for a variety of applications.

The SI3443DVTR is able to withstand high levels of energy and is able to operate in extremely harsh environments. It is able to operate in high temperature conditions and provides strong protection against ESD (electro-static discharge) and electrical over-stress conditions. The device also has extremely low noise levels and high switching times, making it suitable for low-power applications.

The SI3443DVTR has a unique feature, which is known as the Adaptive Body Bias (ABB) circuit. This feature helps to provide maximum efficiency for the device, by automatically adjusting the voltage on the gate of the device under varying conditions. This feature helps to reduce device power dissipation and improve the overall performance of the device.

The Working Principle of the SI3443DVTR is based on the fact that it is an N-channel MOSFET, which acts as a static switch between two points in an electrical circuit. The transistor is able to control the current flow between these two points by changing the voltage applied to its gate. In order to increase the current flow, the voltage applied to the gate is increased, which causes the channel to "open" and allow more current to flow. Conversely, to decrease the current flow, the voltage applied to the gate is decreased, which causes the channel to "close" and lessen the current flow.

One of the major advantages of the SI3443DVTR is its low on resistance. This low on resistance allows the device to maintain high efficiency and performance over a wide range of conditions and temperatures. Furthermore, the Adaptive Body Bias (ABB) circuit helps to further reduce power dissipation and improves the overall performance of the device. This device is versatile and can be used for a variety of applications, such as power supply switching, port protection, and current limiting circuits.

The specific data is subject to PDF, and the above content is for reference