Allicdata Part #: | SI3493DV-T1-E3-ND |
Manufacturer Part#: |
SI3493DV-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 5.3A 6-TSOP |
More Detail: | P-Channel 20V 5.3A (Ta) 1.1W (Ta) Surface Mount 6-... |
DataSheet: | SI3493DV-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 4.5V |
Vgs (Max): | ±8V |
FET Feature: | -- |
Power Dissipation (Max): | 1.1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-TSOP |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
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The SI3493DV-T1-E3 is a N-channel MOSFET Transistor that is designed to be used in a variety of applications. This type of transistor is particularly useful in low-voltage, high-speed switching applications, as it is designed to be able to switch signals quickly and reliably. The relatively low cost and high durability of the SI3493DV-T1-E3 makes it an attractive choice for many applications, such as motor and automotive control, digital and analog circuits, and industrial equipment.
The SI3493DV-T1-E3 is a single-channel MOSFET transistor. It features a current limit of 200 mA and a voltage range of up to 50 V. Its low capacitance (as low as 0.7 pF) and low on-resistance make it well suited for high-speed switching applications. The SI3493DV-T1-E3 also features reverse-current protection, which can help to ensure that no excessive current flows through the transistor in the event of an unexpected voltage spike.
The working principle of the SI3493DV-T1-E3 is based on the operating characteristics of a MOSFET transistor. These are transistors that are designed to pass current through a channel when a positive voltage is applied to its gate terminal. This positive voltage causes a “channel” to open up in the transistor, allowing current to pass through. When the voltage is removed, the channel is closed, and no current is allowed to pass through the transistor.
In the SI3493DV-T1-E3, the channel is formed when a positive gate-to-source voltage of 3.2 V is applied. This causes the channel to open, and current is allowed to pass from the transistor’s drain terminal to its source terminal. The larger the voltage applied to the transistor’s gate, the wider the channel, and the more current can pass through the transistor.
The SI3493DV-T1-E3 is well suited for use in a variety of applications. It can be used in digital and analog circuits, such as logic controllers, multiplexers, and timers. The SI3493DV-T1-E3 can also be used in automotive, motor and industrial control applications, as its low on-resistance, low capacitance, and robust reverse-current protection make it an attractive choice for high-speed switching applications.
In summary, the SI3493DV-T1-E3 is a single-channel MOSFET transistor that is designed for use in low-voltage, high-speed switching applications. It features a current limit of 200 mA, a voltage range of up to 50 V, and a reverse-current protection feature. The SI3493DV-T1-E3 is well suited for use in a variety of digital and analog circuits, motor control, and industrial applications. Moreover, the relatively low cost and high durability of the SI3493DV-T1-E3 make it an attractive choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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