Allicdata Part #: | SI3481DV-T1-GE3-ND |
Manufacturer Part#: |
SI3481DV-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 30V 4A 6-TSOP |
More Detail: | P-Channel 30V 4A (Ta) 1.14W (Ta) Surface Mount 6-T... |
DataSheet: | SI3481DV-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.14W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 48 mOhm @ 5.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI3481DV-T1-GE3 is a high voltage and fast switching N-Channel Enhancement-Mode MOSFET Integrated Circuit (IC) that is designed for use in a variety of applications as a load switch. The IC’s relatively low on-resistance without gate drive gives it a variety of uses, from acting as a direct load switch in power supplies and audio amplifiers to acting as a switch for power management systems. With its impressive high voltage operation and its superior speed, it is an ideal choice for many different applications.The SI3481DV-T1-GE3 is an N-Channel MOSFET with a logic level gate and a 20V drain source voltage. It is a single device, which means that it is a single N-channel MOSFET with an integrated gate. The MOSFET is a type of metallic-oxide-semiconductor field-effect transistor (MOSFET). The device is a high voltage, fast switching device, which means that it is capable of switching large amounts of power quickly and efficiently. In addition, the device has a lower gate ldrive current than most other MOSFETs, which means that it can be used in many low power applications as well. It is capable of operating at temperatures up to 175°C.The key feature of the SI3481DV-T1-GE3 is its low on-resistance without gate drive. This helps to reduce power losses and improves efficiency of the device, as well as allowing for use in a variety of applications such as load switching and electric motor control. The low gate drive current also allows for the use of the device in low-power applications.The SI3481DV-T1-GE3 is a versatile device with a variety of applications. As a load switch, it can be used in any application that requires fast switching of high voltage or large amounts of power. It is commonly used in power supplies, audio amplifiers, robotics, and other applications where a fast switching device is needed.In addition, the device can be used in power management systems as a switch for managing the operation of different components within the system. This is due to its small size and its superior switching speed, which makes it well suited for use in tight spaces and for detecting and controlling the flow of power quickly and efficiently.The SI3481DV-T1-GE3 is an excellent choice for a variety of different applications due to its low on-resistance, its superior switching speed, and its small size. With its impressive high voltage operation and its superior speed, it is an ideal choice for many different applications. This makes the SI3481DV-T1-GE3 a useful and versatile device for load switching and power management systems, as well as for many other applications.
The specific data is subject to PDF, and the above content is for reference
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