SI3456BDV-T1-GE3

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The SI3456BDV-T1-GE3 is a high-performance, high-efficiency low-voltage transistor for use in power management and motor drives applications. The device is specifically designed for low current power management applications as well as motor drive applications.

The SI3456BDV-T1-GE3 is a power MOSFET that utilizes the vertical structure and is a “floating” device with indicated gates adjacent to the substrate. The SI3456BDV-T1-GE3 is built with N-type MOSFETs and P-type source/drain junctions to enhance the performance and power efficiency of the device.

The working principle of the device is to reduce on state resistance and improve switching efficiency. The device has a low gate threshold voltage and a high channel concentration which allows it to operate at low voltage while providing a high current-carrying capacity.

The SI3456BDV-T1-GE3 has a wide range of applications such as: power management, light dimmer, power supply, motor drives, audio AC and DC switch, H-bridge motor drivers, battery charger circuits and many others.

The device is used to provide a low on-state resistance, fast-switching operation, and a low voltage drop. The transistor\'s controlling terminal provides an easy way for controlling high efficiency and low power consumption for motor operations. The device is also ideal for use in automotive applications that require high efficiency, low emissions, and low on-state resistance.

The device also features overvoltage protection when the transistor is connected to an inductive load. This feature protects the transistor against transient overvoltage spikes. This feature is very useful in applications where the load is switched infrequently and the gate voltage needs to be re-applied each time.

In addition, the device offers more reliable operation compared to other MOSFETs with same ratings. The SI3456BDV-T1-GE3 is ideal for use in applications where it is imperative to minimize power loss and optimize overall system efficiency.

The SI3456BDV-T1-GE3 is classified as a single-mode power MOSFET. It is capable of handling currents up to 50A and has an on-state resistance of 0.004Ω at a gate voltage of 5V. The device has a maximum voltage rating of 600V and can be used in a wide range of applications.

In conclusion, the SI3456BDV-T1-GE3 is a high-performing, low-voltage, single-mode power MOSFET designed for low current power management applications and motor drives. It offers fast switching, low on-state resistance, and high channel concentration, making it ideal for use in applications such as power management, light dimmer, power supply, motor drives, audio AC and DC switch, H-bridge motor drivers, and battery charger circuits.

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