SI3495DV-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI3495DV-T1-GE3 is a Vertical DMOS power transistor that operates within a wide range of temperatures, from -55°C to 175°C, and is specifically designed to operate within linear power amplifiers and switching applications. It has a unique MOSFET-based structure, allowing it to provide greater power output and efficiency than conventional transistors, while consuming less power in the process.

The main advantage of the SI3495DV-T1-GE3 is its power efficiency. It has a current gain of 82 at a voltage of 3 V, and a breakdown voltage of 175 V. This makes it suitable for use in applications where power efficiency is critical. Its MOSFET structure helps reduce power consumption by allowing it to switch on and off faster than traditional transistors. Its PZT (positive temperature coefficient) processing helps reduce thermal runaway, making it more reliable.

The SI3495DV-T1-GE3 is commonly used in linear power amplifiers and switching applications. It is compatible with most microcontroller devices and can be used with various power supply types, including AC and DC. In addition, it is compatible with digital signal processing devices, including microcontrollers and digital signal processors, allowing it to be used in a wide range of applications. Its low gate voltages and low drain currents make it ideal for use in low power applications such as Raspberry Pi and Arduino projects.

The SI3495DV-T1-GE3 offers low on and off leakage current, making it suitable for use in high-power applications. Its low gate capacitance, as well as its low threshold voltage and gate charge enable it to offer enhanced performance when used in high-power applications. It is also fast switching, allowing it to switch on and off quickly and reduce switching losses.

The SI3495DV-T1-GE3 application field and working principle is based on its unique MOSFET design. This gives it higher power efficiency, allowing it to use less power. As mentioned, its low threshold voltage, gate charge and low gate capacitance work together to reduce power loss, improve performance and reduce switching losses. In addition, its PZT processing helps reduce thermal runaway, making it more reliable for use in high-power applications.

In conclusion, the SI3495DV-T1-GE3 Vertical DMOS power transistor is an ideal choice for use in linear power amplifiers and switching applications. Its high power efficiency, low power consumption and low voltage requirements make it an ideal choice for use in low power applications. Its fast switching capabilities and low thermal runaway also make it the perfect choice for more demanding high-power applications. With its ability to offer superior performance, the SI3495DV-T1-GE3 is an excellent choice for both commercial and industrial applications.

The specific data is subject to PDF, and the above content is for reference