Allicdata Part #: | SI3420-TP-ND |
Manufacturer Part#: |
SI3420-TP |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | MOSFET N-CHANNEL 20V 6A SOT23 |
More Detail: | N-Channel 20V 6A (Tc) 350mW (Tc) Surface Mount SOT... |
DataSheet: | SI3420-TP Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.04782 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 350mW (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 630pF @ 10V |
Vgs (Max): | ±12V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI3420-TP is a series of MOSFET transistors manufactured by Siliconix. They are primarily used in power electronics and related applications, such as low-voltage power switching in motor control applications and DC-DC converters. These transistors are available in a variety of packages, including SO-8 and MSOP-8, and are designed to be used in high-density, physically constrained or high-temperature environments.
The MOSFET is a type of transistor that is used to control the flow of current in modern electronic devices. They are used to amplify signals and turn them on or off. MOSFET stands for ‘Metal Oxide Semiconductor Field Effect Transistor’. A MOSFET is an insulated-gate field-effect transistor, which acts as a voltage-controlled switch. When the voltage on the gate of the MOSFET is increased, its channel is opened, allowing current to flow between the source and drain terminals. When the gate voltage is reduced, the channel is closed, thus allowing no current to flow between the two.
The SI3420-TP series of MOSFETs is designed to operate in a single-shot mode, which means that the transistor can be turned on or off quickly in a single operations. This makes them ideal for applications that require a fast response and high levels of current efficiency. The devices are also designed to protect against short-circuit conditions and over-current conditions. Unlike other MOSFET devices, the SI3420-TP does not have an integrated anti-parallel body & backgate diode, which significantly reduces power loss and increases efficiency.
The SI3420-TP series of MOSFETs also feature a low-voltage on-resistance (RDS(ON)) and a low gate-charge (Qg) for improved efficiency and reduced power loss. The devices have a high temperature range and are suitable for operating temperatures between -55°C and 175°C. They are also designed to operate up to 10 MHz, and a high-frequency operation of 1 MHZ is possible.
The working principle of the SI3420-TP device is based on the principle of a majority charge carriers which can either be electrons or holes. When the gate voltage is increased, majority carriers are generated, which start to flow through their respective channel. As the gate voltage is increased further, the carriers start combining, which generates an electric field. This electric field opens a channel between the source and the drain, allowing current to flow through the device.
The SI3420-TP is ideal for industrial and consumer applications requiring high-efficiency, high-temperature performance with low on-resistance and fast switching. Its single-shot operation also makes it suitable for use in motor control applications and DC-DC converters where a high level of instantaneous current flow is necessary. The SI3420-TP series has become an increasingly popular device for high-performance power switching applications.
The specific data is subject to PDF, and the above content is for reference
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