SI3469DV-T1-E3 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	6-TSOP
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.14W (Ta)
FET Feature:	--
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	30 mOhm @ 6.7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	5A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The SI3469DV-T1-E3 is a single-channel alternating current (AC) enhancement mode field effect transistor (FET) designed for use in various applications. It has a breakdown voltage of 500V, gate voltage of –4.5V and drain to source current of 2.0A. The SI3469DV-T1-E3 is available in a TO-247 package with a drain source voltage of 500V and drain-source on-resistance of 6.7 ohms.The SI3469DV-T1-E3 utilizes a GaN-based structure, meaning that a wide range of applications can be achieved as the FET can reliably and durably allow a current to pass through when required. The FET also offers a full range of protection features, including integrated ESD protection, process variation protection and undervoltage lockout.The SI3469DV-T1-E3 is suitable for use in a variety of applications, including industrial, automotive and computing. In automotive applications, the FET is used to control the flow of current in air conditioning system components. In industrial applications, the FET is used to switch the current flowing in a high-pressure gas circuit or electric motor drive.The working principle behind the SI3469DV-T1-E3 is based on the flow of electrons. The FET consists of three terminals, an input, an output and a common. When a positive direct current (DC) voltage is applied to the input terminal, an electric field is formed which attracts electrons from the output terminal to the input terminal and thereby creates an inverted current flow from the input to the output. This current flow can be interrupted either by reversing the polarity of the applied voltage, or by removing the voltage altogether.The SI3469DV-T1-E3 has a wide range of features, making it a popular choice for a variety of applications. Its low gate voltage and drain-source on-resistance, combined with its high breakdown voltage and integrated protection features, make it a reliable and robust option. Its GaN-based structure also makes it suitable for a wide range of tasks, making it a versatile and reliable choice for many applications.

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