Allicdata Part #: | SI4396DY-T1-E3TR-ND |
Manufacturer Part#: |
SI4396DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 16A 8-SOIC |
More Detail: | N-Channel 30V 16A (Tc) 3.1W (Ta), 5.4W (Tc) Surfac... |
DataSheet: | SI4396DY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.6V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 5.4W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1675pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 11.5 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SI4396DY-T1-E3 is an analog power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by Vishay, a manufacturer of advanced semiconductor technology. It is a type of single N-channel MOSFET, designed for power switching applications such as Motor Control, Battery Management and DC-DC Converters. This device comes in a small and convenient package, allowing it to be used in limited space applications.
When the device is employed, the electrical current passes through a connection between the source terminal and the drain terminal. During the process, the source and drain terminals of the device should be make sure being kept at different potentials, forming an electric field across the channel. As current flow pass through the applied field, a voltage drop is seen across the dynamic resistance, which is known as the channel resistance. This voltage drop determines the amount of current that flows through the MOSFET.
Due to its unique structure and design characteristics, SI4396DY-T1-E3 exhibits an enhanced performance compared with other MOSFETs. The RDS(on) or on-state resistance rating measures the amount of power dissipated by the device as it passes trough the channel. The low on-state resistance rating of SI4396DY-T1-E3 makes it an ideal choice for high current switching applications that demand high power efficiency.
SI4396DY-T1-E3 is a useful MOSFET for both industrial and consumer applications. Its low gate and drain capacitance, as well as its fast switching speed allow for quick and efficient signal switching, thus making it suitable for use in motor control applications. Additionally, its low gate threshold voltage and low on-resistance rating also make it suitable for battery management applications. In addition to these applications, the device can also be used in DC-DC converters, power supplies and renewable energy sources, making it a versatile solution for a variety of power switching applications.
The SI4396DY-T1-E3 represents a new generation of MOSFET technology, offering improved performance and reliability over current MOSFETs. As with any technology, it is important to do all the necessary research and ensure that you understand the product before using it in any project. However, for those seeking a stable and reliable switching transistor, the SI4396DY-T1-E3 is a great choice.
The specific data is subject to PDF, and the above content is for reference
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