Allicdata Part #: | SI4330DY-T1-GE3-ND |
Manufacturer Part#: |
SI4330DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 30V 6.6A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 6.6A 1.1W Surf... |
DataSheet: | SI4330DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Base Part Number: | SI4330 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.1W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 16.5 mOhm @ 8.7A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.6A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI4330DY-T1-GE3 is a low-cost, high-performance, dual-channel dual-gate MOSFET array with many applications.
It is a high-speed and high-efficiency product, with a maximum operating frequency of 300 MHz, low on-resistance of 30 mΩ, and input capacitance of 5.1 pF typical. It is well suited for RF-related applications, such as switches, power amplifiers, power gain stages and other applications that require high-speed operation. The device features excellent VGS/VDS repeatability and low-gate charge for high-speed switching.
It is designed to operate from a supply voltage ranging from 2.5 to 12 volts. It features a small package outline of 4 x 4 mm, making it suitable for many space-constrained applications. The device also has high ESD protection of up to 4 kV HBM.
The SI4330DY-T1-GE3 MOSFET array consists of two N-channel Enhancement-mode MOSFETs with an integrated source resistor, separated by an isolated gate drive. The source resistors can be used to reduce power consumption, as they reduce the voltage across the gate and source in the ON state. The integrated source resistor also reduces the ringing effect at high frequencies.
The design of the device includes a dual-gate structure that prevents the occurrence of n-channel depletion and improves isolation between the two MOSFETs. This makes the device suitable for use in single-ended applications, like in analog switches.
The device also features a low Ron-Ron flatness product, low Ron drift over temperature, as well as a low static power consumption of only 0.3 mW. This makes it ideal for applications that require low power consumption, such as portable devices and battery-powered applications.
The SI4330DY-T1-GE3 is an ideal device for many applications such as switches, power amplifiers, power gain stages and other applications that require high-speed operation. It is also suitable for use in single-ended applications, like in analog switches. The low static power consumption and high ESD protection make it ideal for portable devices and battery-powered applications.
The specific data is subject to PDF, and the above content is for reference
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