SI5980DU-T1-GE3

Vgs(th) (Max) @ Id:	4V @ 250µA
Base Part Number:	SI5980
Supplier Device Package:	PowerPAK® ChipFet Dual
Package / Case:	PowerPAK® ChipFET™ Dual
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	7.8W
Input Capacitance (Ciss) (Max) @ Vds:	78pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:	3.3nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	567 mOhm @ 400mA, 10V
Current - Continuous Drain (Id) @ 25°C:	2.5A
Drain to Source Voltage (Vdss):	100V
FET Feature:	Standard
FET Type:	2 N-Channel (Dual)
Part Status:	Obsolete
Packaging:	Cut Tape (CT)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SI5980DU-T1-GE3 is a type of field effect transistor (FET) array. It is a four-channel source-drain connected unit of N-channel FETs. This transistor array is made of Gallium Nitride (GaN) semiconductor material.The SI5980DU-T1-GE3 offers an equivalent output resistance of 3.9 ohms and a maximum possible input voltage of up to 20 volts at 20 mA. This makes it ideal for a variety of applications which require low power and high efficiency.ApplicationsThe SI5980DU-T1-GE3 is typically used in process control applications, DC motor powering, automatic control and electrical appliances. It can also be used in television sets, video monitors, radio receivers, portable computers and more.The use of GaN-based semiconductor materials greatly increases the speed and durability of the SI5980DU-T1-GE3 array. This is especially beneficial when the actual operation of the device is required to be fast and precise. Its high input voltage and low-power consumption makes it suitable for applications which require both accuracy and economy.Working PrincipleThe working principle of the SI5980DU-T1-GE3 is based on the process of electric field modulation. The transistor is made up of two separate electrodes. The first electrode acts like a gate and the second is the drain. When a potential difference exists between the causes a current to flow through the transistor, allowing it to switch the signal from the gate to the drain.The transistor array also acts like a filter and amplifies the signal applied to the gate, controlling the current flowing towards the drain. The output from the drain is used for the required effect, such as switching an electric circuit for controlling a AC motor or modulating a signal.The SI5980DU-T1-GE3 array is designed to handle a wide range of frequencies, making it suitable for a variety of applications. This device is ideal for high-speed, low-power and low-noise applications such as switching and signal modulation.ConclusionThe SI5980DU-T1-GE3 is a four-channel source-drain connected N-channel FET array. It is made of Gallium Nitride (GaN) semiconductor material, which makes it ideal for DC motor powering, automatic control, electrical appliances and more. The SI5980DU-T1-GE3 works on the principle of electric field modulation and offers high input voltage and low-power consumption. It is capable of handling a wide range of frequencies, making it suitable for applications that require both accuracy and economy.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description