SI7119DN-T1-GE3

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The SI7119DN-T1-GE3 is a high-frequency, high voltage, low power N-Channel MOSFET from Vishay, a major supplier of semiconductor components. It is a single chip, N-channel MOSFET with a maximum drain-source voltage of 400V and a maximum on-state resistance of 6.3mΩ. The device is RoHS- and REACH-compliant and is designed for use in a wide range of applications, including automotive, industrial, and consumer electronics. In this article, we will discuss the application field and working principle of the SI7119DN-T1-GE3.

The SI7119DN-T1-GE3 is a high-frequency and high voltage MOSFET that is designed for use in applications such as DC/DC converters, automotive power management, LED lighting, solar applications, switches, motors and AC/DC regulators. It is also suitable for use in high frequency boost converters. The device has a maximum drain-source voltage of 400V and a maximum on-state resistance of 6.3mΩ. The device is RoHS- and REACH-compliant and is designed for use in a wide range of applications, including automotive, industrial, and consumer electronics.

The working principle of the SI7119DN-T1-GE3 is based upon the transfer of electrons from the source to the drain of the MOSFET. This flow of electrons is regulated by a gate voltage which is applied to the gate of the MOSFET. The gate voltage controls the width of the channel between the source and the drain which in turn controls the current that can flow through the channel. If the gate voltage is low, the channel will be wide and the current that can flow through it will be large. If the gate voltage is high, the channel will be narrow and the current that can flow through it will be small.

The SI7119DN-T1-GE3 also has an internal drain-to-source diode which protects the MOSFET from reverse voltage. The diode will conduct when the voltage across the drain-source junction is reversed, thus preventing damage to the MOSFET. The SI7119DN-T1-GE3 is also equipped with an inverse avalanche rating which provides protection from high static drain-to-source voltages, as well as enabling it to be used in a wide range of applications.

In summary, the SI7119DN-T1-GE3 is a high frequency, high voltage, low power N-Channel MOSFET designed for use in a wide range of applications. The device has a maximum drain-source voltage of 400V and a maximum on-state resistance of 6.3mΩ. The device is RoHS- and REACH-compliant and is designed for use in a wide range of applications, including automotive, industrial, and consumer electronics. Its working principle is based upon the transfer of electrons from source to drain, which is regulated by a gate voltage. The SI7119DN-T1-GE3 is also equipped with an internal drain-to-source diode and an inverse avalanche rating. As such, it is a versatile and reliable device for use in numerous applications.

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