| Allicdata Part #: | SI7190DP-T1-GE3TR-ND |
| Manufacturer Part#: |
SI7190DP-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 250V 18.4A PPAK SO-8 |
| More Detail: | N-Channel 250V 18.4A (Tc) 5.4W (Ta), 96W (Tc) Surf... |
| DataSheet: |  SI7190DP-T1-GE3 Datasheet/PDF |
| Quantity: | 6000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | PowerPAK® SO-8 |
| Supplier Device Package: | PowerPAK® SO-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 5.4W (Ta), 96W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2214pF @ 125V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 118 mOhm @ 4.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 18.4A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The SI7190DP-T1-GE3 is a high-power, high-speed, P-channel enhancement mode MOSFET designed to drive high-current and high-voltage applications. The device is designed for switching mode, load switching, and load switching with in-rush current limiting applications, and is also suitable for wide-bandgap switching voltage power supply applications. It has been designed to solve the problems of low conductivity and lower breakdown voltage of traditional MOSFETs, and has become a popular choice for many different applications. This article will discuss the application field and working principle of the SI7190DP-T1-GE3.The SI7190DP-T1-GE3 is an enhancement type MOSFET which utilizes a P-Channel design. P-Channel MOSFETs are some of the most commonly used transistors in digital electronics as they are designed to efficiently switch currents from low to high levels, making them ideal for high speed and power applications. P-Channel MOSFETs have the benefit of relatively low threshold voltage, and are capable of operating at higher frequencies than N-Channel devices.The SI7190DP-T1-GE3 has a high power capability with a maximum current rating of 75A, and a voltage rating of 40V. It is an ideal choice for a variety of switching and load switching applications, as it has the ability to switch large currents with very low RDS(on) values. Additionally, it can handle high voltage in-rush current loads, making it ideal for switching power supplies.The working principle of the SI7190DP-T1-GE3 utilizes the passivating dielectric (HfO2) layer of the device to provide a barrier of non-conductive material between the P-Channel region and the N-Type Source/Drain Regions. This barrier of dielectric prevents currents from flowing between the source/drain regions and the P-Channel region, and thus is only “closed” when a voltage is applied across it that exceeds the threshold. The device is designed to minimize its on-state conduction loss and leakage current by utilizing an ultra-low RDS(on) value.The SI7190DP-T1-GE3 is designed to be used in a variety of high current and high power applications, such as smart power management and motor control. Its high power ratings make it ideal for load switching and in-rush current applications. It is also suitable for power supply applications as it can operate at high frequencies, with low switching losses.In conclusion, the SI7190DP-T1-GE3 is an ideal choice for applications that require high-power and high-speed switching. It has been designed to be cost-effective, reliable, and suitable for a wide range of applications. Its P-Channel design and ultra-low RDS(on) value make it the ideal choice for both high current and high voltage applications. Furthermore, its passivating dielectric layer provides superior performance in high voltage and high current applications.
The specific data is subject to PDF, and the above content is for reference
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