Allicdata Part #: | SI7121DN-T1-GE3TR-ND |
Manufacturer Part#: |
SI7121DN-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 30V 16A 1212-8 |
More Detail: | P-Channel 30V 16A (Tc) 3.7W (Ta), 52W (Tc) Surface... |
DataSheet: | SI7121DN-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1960pF @ 15V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI7121DN-T1-GE3 is a unique type of transistor belonging to the FETs, MOSFETs - Single family. A transistor is essentially an electronic device that positions a solid-state conducting channel between two electrodes separated by a semiconductor material. This channel allows electric current to flow through when activated, acting as a switch.
SI7121DN-T1-GE3 is a Silicon Nitride (SiN) power field-effect transistor (FET). This component has an ultra-low gate capacitance and on-resistance. It is designed specifically for high voltage, high speed switching applications. It is specifically designed for high frequency switching and switching applications where there is fast transitioning of pulse waveforms.
It provides a low on-resistance and low gate charge for high frequency applications. The gate and drain-source pin configuration ensures excellent thermal performance. Furthermore, the component is constructed from a temperature-stable silicon nitride, which ensures the component will not suffer from thermal drift due to temperature changes. It is capable of operating from a wide range of supply voltages.
The component works by creating an electrical field between two electrodes. When the component is turned on, current flows through the component and creates a voltage drop. This voltage drop creates an electric field that allows current to flow through it. When the component is turned off, the electric field is switched off and current cannot flow.
The component is incredibly versatile and can be used in a wide range of applications. The component is useful for applications that require a high-voltage, high-speed switching system, such as automotive power electronics, AC and DC motor control, LED backlighting, and DC-DC converters. The component is also suitable for portable and battery-powered systems due to its ultra-low gate charge.
While the component has a wide range of uses, it is primarily used in automotive power electronics. This type of application requires the component to switch between voltages in a timely manner while still maintaining high efficiency. The SI7121DN-T1-GE3 is uniquely suited to this application due to its low on-resistance and gate charge. As a result, the component is able to switch between different voltages with minimal power loss.
The SI7121DN-T1-GE3 is an incredibly versatile component capable of providing excellent performance in a wide range of applications. This component is capable of operating from a wide range of supply voltages and its low on-resistance and gate charge make it ideal for high-frequency, high-speed switching applications. As such, the SI7121DN-T1-GE3 is a popular choice for a range of automotive power electronics, AC and DC motor control, LED backlighting, and DC-DC converters.
The specific data is subject to PDF, and the above content is for reference
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