SI7115DN-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7115DN-T1-GE3TR-ND

Manufacturer Part#:

SI7115DN-T1-GE3

Price: $ 1.76
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 150V 8.9A 1212-8
More Detail: P-Channel 150V 8.9A (Tc) 3.7W (Ta), 52W (Tc) Surfa...
DataSheet: SI7115DN-T1-GE3 datasheetSI7115DN-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: $ 1.76000
10 +: $ 1.70720
100 +: $ 1.67200
1000 +: $ 1.63680
10000 +: $ 1.58400
Stock 1000Can Ship Immediately
$ 1.76
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 295 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7115DN-T1-GE3 is a small footprint, high voltage, dual-page MOSFET that is used to control the current in power electronics applications. The device is optimized for applications such as drives, motor control, lighting, and other precision circuits. The MOSFET is composed of an N-Channel MOSFET and an integrated Gate Driver IC housed in a miniature, dual-inline package.

The device provides an excellent combination of performance, cost, and efficiency. The device is characterized by its high voltage capability and low on resistor, which allows it to switch higher induction loads. The on-resistance with fast switching time ensures good efficiency, while the device’s low profile provides better thermal performance. In addition, the device has an integrated charge pump and an LED display.

The SI7115DN-T1-GE3 features a high-performance, integrated charge pump which makes it easier to drive the Gate and reduce power loss. This feature also allows for a wide range of power input voltage and improved system reliability. The device also features a low voltage supply and low power consumption, allowing for higher system efficiency. Additionally, the device has an integrated LED display and is rated for operation from -40°C to + 85°C.

The working principle of the device is based on the field-effect transistor (FET). A FET is a three-terminal device consisting of a copper gate, a floating gate, and a source/drain. When a voltage is applied to the gate, electrons are attracted to the gate and the source and drain regions are deactivated or activated accordingly. The MOSFET also has an integrated charge pump, which is used to increase the gate voltage and to provide higher voltage level for controlling the current in the device.

The SI7115DN-T1-GE3 can be used in a wide range of applications in power electronics, including motor control and lighting. The device can be used in drives and in motor control systems, where it can maintain the current and speed of the motor. It can also be used in lighting systems, where it can adjust the brightness of the light and enable the user to control the output. Additionally, the Si7115DN-T1-GE3 can be used in other precision applications such as motor controllers, where the device can be used to adjust the current and ensure high efficiency.

In conclusion, the SI7115DN-T1-GE3 is a small, yet powerful, dual-page MOSFET that is designed for use in precision control applications. The device features a high voltage capability, an integrated charge pump and an LED display, and it is ideal for use in drives, motor control, lighting, and other precision circuits. The device uses the typical FET working principle and can be used in a wide range of applications, allowing for high efficiency and improved system reliability.

The specific data is subject to PDF, and the above content is for reference

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