SI7160DP-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI7160DP-T1-GE3, a MOSFET (metal-oxide-semiconductor field-effect transistor) by Vishay Semiconductor, is a part of their popular “I-Plus” lineup of ultra-low on-resistance power MOSFETs. This particular transistor is ideal for applications such as industrial power converters, high frequency drivers, and high speed switching circuits. The device’s low on-resistance makes it perfect for higher current load applications, while its fast switching speeds (trr of 15 ns) allow it to work well with high frequency circuits. In addition, its wide operating temperature range (-55°C to +175°C) makes it a viable choice for applications in harsh environments.

The SI7160DP-T1-GE3’s topology is VDMOS (Vertical Double-Diffused Metal-Oxide Semiconductor). This type of transistor is found in both low voltage and higher voltage applications. VDMOS features the same high drain-source (body) voltage as Planar MOSFETs, but their improved performance comes from their double-diffused construction. With this design, the gate oxide is embedded between two lightly doped P-type layers. This layer contributes to the reduction of on-state resistance, as well as the device capacitances, allowing for faster conduction and switching times.

When it comes to the working principle of the SI7160DP-T1-GE3, it’s simple. When the gate voltage is below the threshold voltage, the MOSFET is off. However, when the gate voltage is above the threshold voltage, electrons tunneling from the gate through the gate oxide are attracted to the source. This causes a channel to form between the source and drain, allowing the current to flow.

In addition to its low on-resistance and fast switching speed, the SI7160DP-T1-GE3 also boasts high capacitive immunity, excellent ESD performance, and a low gate charge. These features make it well-suited for a wide range of applications, including industrial power converters, high frequency drivers, high speed switching, mobile phones, automotive systems, and many more. Because of these advantages, the SI7160DP-T1-GE3 has become a preferred choice by many design engineers.

In conclusion, the SI7160DP-T1-GE3’s low on-resistance, fast switching speed, high capacitive immunity, and ESD protection make it a great choice for a variety of applications. With its wide operating temperature range and ability to handle high loads, this MOSFET transistor is perfect for use in industrial power converters, high frequency drivers, and high speed switching circuits.

The specific data is subject to PDF, and the above content is for reference