Allicdata Part #: | SI7402DN-T1-GE3-ND |
Manufacturer Part#: |
SI7402DN-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 12V 13A PPAK 1212-8 |
More Detail: | N-Channel 12V 13A (Ta) 1.5W (Ta) Surface Mount Pow... |
DataSheet: | SI7402DN-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 850mV @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 5.7 mOhm @ 20A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Description
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SI7402DN-T1-GE3 is a type of single MOSFET, which is a type of transistor used in a wide variety of circuit applications. It is designed for low voltage applications and has a current handling capacity of 3A on the gate. It has an RDS(ON) of 4.4 Ohms and is a depletion-mode MOSFET. The SI7402DN-T1-GE3 is designed for applications such as motor control, automotive control, power supply, and switching.Working Principle of the SI7402DN-T1-GE3MOSFETs are three-terminal voltage controlled devices used in a wide variety of applications. Their operation is based on the operation of an insulated gate used to control the source-drain current flow. The source is an N-type material and the drain is a P-type material. A voltage applied to the gate controls the channel current that flows between the source and drain.When a positive voltage is applied to the gate, the channel current increases in a linear fashion as the applied voltage increases. This is known as the enhancement region of operation. When a negative voltage is applied to the gate, the channel current is cutoff, and no current flows through the device. This is known as the depletion region of operation.When using an N-Channel MOSFET, the drain will become positive with respect to the source when the gate bias voltage is high. The opposite is true for a P-Channel MOSFET, where the source will become positive with respect to the drain when the gate bias is high.The SI7402DN-T1-GE3 is a depletion-mode MOSFET, meaning that it requires a negative potential on the gate in order to turn on the device. This is beneficial in applications in which the device needs to be always on, such as in switch-mode power supplies.Applications of the SI7402DN-T1-GE3The SI7402DN-T1-GE3 can be used in many different applications including motor control, automotive control, power supply, and switching.Motor Control: The SI7402DN-T1-GE3 can be used in motor control applications, such as DC Brushless Motors or Servo Motors, where an efficient low-side switch is needed. With its low RDS(ON) of 4.4 ohms and its high current handling capacity of 3A, it is ideal for these types of applications.Automotive Control: The SI7402DN-T1-GE3 can also be used in automotive control applications, such as vehicle body control systems or security systems, as it can be used to control high currents with minimal power dissipation.Power Supply: The SI7402DN-T1-GE3 can also be used in power supply applications where the device needs to switch a large amount of current on and off rapidly. The low RDS(ON) and high current handling capacity make it perfect for this type of application.Switching: The SI7402DN-T1-GE3 can be used in switching applications as it can switch a high amount of current and be used in high performance DC/DC converters.The SI7402DN-T1-GE3 is a very versatile and capable device, and can be employed in a wide variety of circuit applications. With its excellent characteristics such as low RDS(ON), low gate capacitance, and high current handling capacity, it is sure to be able to meet the needs of many different circuit applications.
The specific data is subject to PDF, and the above content is for reference
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