SI7425DN-T1-E3 Allicdata Electronics
Allicdata Part #:

SI7425DN-T1-E3-ND

Manufacturer Part#:

SI7425DN-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 12V 8.3A PPAK 1212-8
More Detail: P-Channel 12V 8.3A (Ta) 1.5W (Ta) Surface Mount Po...
DataSheet: SI7425DN-T1-E3 datasheetSI7425DN-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 300µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
FET Feature: --
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 16 mOhm @ 12.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI7425DN-T1-E3 device is a single MOSFET with many applications and a wide range of working principles. It is usually used as a digital switch in electronics applications such as robotics, LED lighting, and automotive systems. The SI7425DN-T1-E3 is also an ideal choice for switching high currents, due to its synchronous rectification capabilities and its high power dissipation capabilities (up to 13A/36V).

The MOSFET works in an analogous fashion to the classical transistor; it uses a gate voltage to control a source-drain current. The major difference is that MOSFETs do not contain any kind of substrate. The lack of substrate results in a much lower input capacitance, which makes it very suitable for high frequency operations. The MOSFET also has very little or no gate resistance, which leads to a higher switching speed and a lower power dissipation.

The SI7425DN-T1-E3 is a very versatile device in terms of its application fields. It can be used as a digital switch in a wide variety of applications because of its low input capacitance and high power dissipation. It is also an ideal choice for applications requiring high switching speed and high current capacity, such as robotic systems and high-powered LED lighting.

The working principle of the SI7425DN-T1-E3 is also quite simple. The gate voltage is applied between the gate and the source, and when this voltage is higher than a certain threshold (the threshold voltage of the device), a current starts flowing from the source to the drain. This current satisfies the following equation:

IDS = (VGS - Vth) * W/L

where W and L are the width and length of the MOSFET, respectively. The amount of current that can be switched is limited by the maximum current specified in the device’s datasheet, which is 13A/36V for the SI7425DN-T1-E3.

The SI7425DN-T1-E3 is also able to handle higher voltages than other types of MOSFETs. This is due to its Synchronous Rectification capability, which allows for higher voltage and current levels to be switched without having to increase the size of the device. Synchronous Rectification is a process where the MOSFET is turned on and off in a synchronized manner, allowing higher levels of voltage and current to be switched without overloading the device.

In conclusion, the SI7425DN-T1-E3 is a single MOSFET with a very wide range of applications and working principles. It can be used as a digital switch in a variety of applications due to its low input capacitance and high power dissipation. It is also suitable for high frequency operations due to its Synchronous Rectification capability, allowing higher voltage and current levels to be switched with minimal power dissipation.

The specific data is subject to PDF, and the above content is for reference

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