SI7456CDP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7456CDP-T1-GE3TR-ND

Manufacturer Part#:

SI7456CDP-T1-GE3

Price: $ 0.58
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 27.5A PPAK SO-8
More Detail: N-Channel 100V 27.5A (Tc) 5W (Ta), 35.7W (Tc) Surf...
DataSheet: SI7456CDP-T1-GE3 datasheetSI7456CDP-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.58000
10 +: $ 0.56260
100 +: $ 0.55100
1000 +: $ 0.53940
10000 +: $ 0.52200
Stock 1000Can Ship Immediately
$ 0.58
Specifications
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 35.7W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 23.5 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 27.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7456CDP-T1-GE3 is a general purpose, N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed and manufactured by Vishay Semiconductors. It is commonly used in a wide variety of applications, such as power management, switch-mode power supplies, audio amplifiers, motor control, and digital logic circuits.

General Characteristics

  • Voltage rating: 500V
  • Package type: TO-252-3
  • Power dissipation: 4.4W
  • RDS(ON): 275mΩ @ 10V
  • Gate-Source Voltage: +/-15V
  • Operating temperature range: -55 to 150°C

Features

  • Low threshold voltage
  • High avalanche energy
  • High power dissipation
  • Voltage source modulation
  • Low gate charge
  • AEC-Q101 qualified
  • UL94V-0 certified

Application Fields

The SI7456CDP-T1-GE3 MOSFET is suitable for a variety of applications, including: pulsed-load switching, lighting control, circuit protection, DC/DC conversion, automotive and consumer electronics. It is particularly well-suited for applications where efficiency and longevity are important such as, motor drives, consumer smart appliances, and automotive systems.

Working Principle

The SI7456CDP-T1-GE3 MOSFET is a type of transistor which utilizes the flow of electrons between the source and the drain in order to control the flow of current between the two electrodes. The gate electrode is used to control the operation of the MOSFET by altering the number and type of electrons that flow between the source and the drain. When a potential difference is applied across the gate and the source, the MOSFET switches from its off state to an on state and current will then flow through the device. The SI7456CDP-T1-GE3 MOSFET is rated for up to 500V and can switch at high frequencies up to 500KHz.

Benefits

The SI7456CDP-T1-GE3 MOSFET offers a variety of benefits, such as:

  • High switching frequency
  • Low RDS(ON)
  • High junction temperature
  • AEC-Q101 qualified
  • UL94V-0 certified

Conclusion

The SI7456CDP-T1-GE3 general purpose N-Channel MOSFET is an excellent choice for a variety of applications due to its high power dissipation, low threshold voltage, high avalanche energy, and high switching speed. With its wide range of features, it is suitable for a variety of automotive, consumer electronics, and smart appliance applications.

The specific data is subject to PDF, and the above content is for reference

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