Allicdata Part #: | SI7402DN-T1-E3-ND |
Manufacturer Part#: |
SI7402DN-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 12V 13A PPAK 1212-8 |
More Detail: | N-Channel 12V 13A (Ta) 1.5W (Ta) Surface Mount Pow... |
DataSheet: | SI7402DN-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 850mV @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 5.7 mOhm @ 20A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SI7402DN-T1-E3 is a silicon-based enhancement mode MOSFET (metal-oxide-semiconductor field-effect transistor) device. It is widely used in various fields due to its high switching speed and low power dissipation. It can be used in applications such as motor control, power conversion, motor controllers, power switching, and power supply regulation.
The SI7402DN-T1-E3 is a single-gate MOSFET with an n-type channel, meaning that it can be used as a normally-off (or normally-open) type of switch. There is no current flow through the device until a voltage is applied to the gate of the device, at which point current can start flowing between the source and drain terminals. This type of device is commonly used in low-voltage and low current applications, such as controlling a fan motor or LED. It has a low on-resistance, meaning that it draws minimal power even when the device is turned on.
The working principle of the SI7402DN-T1-E3 is based on the principle of the MOS field-effect transistor. The gate of the device is insulated from the rest of the device, so when a voltage is applied to the gate, the electric field created between the gate and the source/drain terminals allows current to flow through the channel. The amount of current that flows through the device is determined by the voltage applied to the gate and the size of the channel.
The SI7402DN-T1-E3 is well-suited for applications requiring high-frequency switching, thanks to its high switching speeds. It also has low power dissipation and a low on-resistance, which makes it suitable for low-power applications. Additionally, the device has high ESD protection, meaning that it can withstand high levels of electrostatic discharge without sustaining damage. This makes it an ideal choice for applications that require protection from ESD.
The SI7402DN-T1-E3 is often used in motor control applications, as it can be used to control the speed of a motor. It can also be used to regulate the voltage level of a power supply and to switch a power supply between different operating modes. Furthermore, it is often used in audio applications such as amplifiers and loud speakers, as it can be used to control the amplitude and frequency of the audio signal.
The SI7402DN-T1-E3 is an excellent choice for applications requiring a fast switching, low power dissipation, and high ESD protection. It has a wide range of applications and can be used in motor control, power conversion, motor controllers, power switching, and power supply regulation. Its impressive performance and high-functionality make it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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