Allicdata Part #: | SI7414DN-T1-GE3TR-ND |
Manufacturer Part#: |
SI7414DN-T1-GE3 |
Price: | $ 0.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 5.6A 1212-8 |
More Detail: | N-Channel 60V 5.6A (Ta) 1.5W (Ta) Surface Mount Po... |
DataSheet: | SI7414DN-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.41809 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 8.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.6A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI7414DN-T1-GE3 is a transistor designed for use in specific application fields. This device is a field-effect transistor, or FET, which is a type of transistor that utilizes a three-terminal design. FETs are used in various applications, and the SI7414DN-T1-GE3 is commonly used in power electronics and logic applications. They are designed to have high current carrying capacity and high-power dissipation. Additionally, this device also has a high input and output impedance, making it suitable for use in precision circuits and other applications that require high levels of accuracy. Furthermore, the SI7414DN-T1-GE3 is capable of fast switching speeds, making it ideal for use in high speed applications.
The working principle of the SI7414DN-T1-GE3 is based on the semiconductor effect. This effect occurs when the electric current is passed through a semi-conducting material such as silicon. When current passes through the silicon material, it causes the material to become less resistant, allowing for electrical charge to be able to move through it more easily. This is the basis of how the SI7414DN-T1-GE3 works. The device works by a gate being attached to the source of the device, and a drain being attached to the source. When a positive voltage is applied to the gate, the current is drawn from the source and directed into the drain. The opposite is true when a negative voltage is applied to the gate. This allows the device to be used in various applications where the output can be changed depending on the voltage applied to the gate.
The SI7414DN-T1-GE3 has a number of key features that make it well-suited for use in a variety of applications. The device is capable of high-power switching, making it suitable for use in power electronic applications. It also has a very low off-state resistance, meaning that it can minimise energy wastage while in idle states. Additionally, the device has a high input and output impedance, making it suitable for use in precision circuits and other applications that require high levels of accuracy. Furthermore, the device is capable of fast switching speeds, making it ideal for use in high speed applications.
In conclusion, the SI7414DN-T1-GE3 is a field-effect transistor designed for use in specific application fields. It works by employing the semiconductor effect, and features a number of key features that make it well-suited for use in a variety of applications. The device has a high current carrying capacity and high-power dissipation, a low off-state resistance, and a high input and output impedance. Additionally, it has fast switching speeds, making it ideal for high speed applications. As such, the SI7414DN-T1-GE3 is a versatile device, capable of being used in a number of different applications.
The specific data is subject to PDF, and the above content is for reference
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