SI7414DN-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7414DN-T1-GE3TR-ND

Manufacturer Part#:

SI7414DN-T1-GE3

Price: $ 0.46
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 5.6A 1212-8
More Detail: N-Channel 60V 5.6A (Ta) 1.5W (Ta) Surface Mount Po...
DataSheet: SI7414DN-T1-GE3 datasheetSI7414DN-T1-GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.41809
Stock 1000Can Ship Immediately
$ 0.46
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 25 mOhm @ 8.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI7414DN-T1-GE3 is a transistor designed for use in specific application fields. This device is a field-effect transistor, or FET, which is a type of transistor that utilizes a three-terminal design. FETs are used in various applications, and the SI7414DN-T1-GE3 is commonly used in power electronics and logic applications. They are designed to have high current carrying capacity and high-power dissipation. Additionally, this device also has a high input and output impedance, making it suitable for use in precision circuits and other applications that require high levels of accuracy. Furthermore, the SI7414DN-T1-GE3 is capable of fast switching speeds, making it ideal for use in high speed applications.

The working principle of the SI7414DN-T1-GE3 is based on the semiconductor effect. This effect occurs when the electric current is passed through a semi-conducting material such as silicon. When current passes through the silicon material, it causes the material to become less resistant, allowing for electrical charge to be able to move through it more easily. This is the basis of how the SI7414DN-T1-GE3 works. The device works by a gate being attached to the source of the device, and a drain being attached to the source. When a positive voltage is applied to the gate, the current is drawn from the source and directed into the drain. The opposite is true when a negative voltage is applied to the gate. This allows the device to be used in various applications where the output can be changed depending on the voltage applied to the gate.

The SI7414DN-T1-GE3 has a number of key features that make it well-suited for use in a variety of applications. The device is capable of high-power switching, making it suitable for use in power electronic applications. It also has a very low off-state resistance, meaning that it can minimise energy wastage while in idle states. Additionally, the device has a high input and output impedance, making it suitable for use in precision circuits and other applications that require high levels of accuracy. Furthermore, the device is capable of fast switching speeds, making it ideal for use in high speed applications.

In conclusion, the SI7414DN-T1-GE3 is a field-effect transistor designed for use in specific application fields. It works by employing the semiconductor effect, and features a number of key features that make it well-suited for use in a variety of applications. The device has a high current carrying capacity and high-power dissipation, a low off-state resistance, and a high input and output impedance. Additionally, it has fast switching speeds, making it ideal for high speed applications. As such, the SI7414DN-T1-GE3 is a versatile device, capable of being used in a number of different applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SI74" Included word is 40
Part Number Manufacturer Price Quantity Description
SI7411DN-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 7.5A 1212...
SI7459DP-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 30V 13A PPAK ...
SI7483ADP-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 30V 14A PPAK ...
SI7485DP-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 12.5A PPA...
SI7464DP-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 200V 1.8A PPA...
SI7434ADP-T1-RE3 Vishay Silic... 0.67 $ 1000 MOSFET N-CHAN 250V POWERP...
SI7423DN-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 30V 7.4A PPAK...
SI7403BDN-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 8A 1212-8...
SI7454CDP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 100V 22A PPAK...
SI7462DP-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 200V 2.6A PPA...
SI7402DN-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 12V 13A PPAK ...
SI7402DN-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 12V 13A PPAK ...
SI7404DN-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 8.5A PPAK...
SI7404DN-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 8.5A PPAK...
SI7407DN-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 12V 9.9A PPAK...
SI7407DN-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 12V 9.9A PPAK...
SI7409ADN-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 30V 7A PPAK 1...
SI7413DN-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 8.4A PPAK...
SI7425DN-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 12V 8.3A PPAK...
SI7425DN-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 12V 8.3A PPAK...
SI7440DP-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 12A PPAK ...
SI7440DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 12A PPAK ...
SI7445DP-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 12A PPAK ...
SI7445DP-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 20V 12A PPAK ...
SI7446BDP-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 12A PPAK ...
SI7446BDP-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 30V 12A PPAK ...
SI7447ADP-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 30V 35A PPAK ...
SI7447ADP-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 30V 35A PPAK ...
SI7448DP-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 20V 13.4A PPA...
SI7452DP-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 60V 11.5A PPA...
SI7452DP-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 60V 11.5A PPA...
SI7457DP-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 100V 28A PPAK...
SI7457DP-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 100V 28A PPAK...
SI7476DP-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 40V 15A PPAK ...
SI7491DP-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 30V 11A PPAK ...
SI7495DP-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 12V 13A PPAK ...
SI7495DP-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 12V 13A PPAK ...
SI7403BDN-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 20V 8A 1212-8...
SI7409ADN-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 30V 7A 1212-8...
SI7411DN-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 20V 7.5A 1212...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics