SI7403BDN-T1-GE3 Discrete Semiconductor Products

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The SI7403BDN-T1-GE3 is a single N-channel MOSFET. It is suitable for a wide range of applications, including power conversion, voltage control, and switching. Being a part of NXP\'s MOSFET family, it presents high level of integration and its optimized power dissipation provides excellent thermal performance.

The SI7403BDN-T1-GE3 is designed for power management in applications such as DC/DC converters, LED lighting, DC to AC inverters, and others. It operates from a 3V to 45V supply and can withstand a drain-to-source voltage of up to 60V. The MOSFET is also designed to be used in power factor correction (PFC) circuits, where low drain-to-source on-state resistance (RDS_on) is required.

The integrated MOSFET, which is built using an advanced N-channel trench technology, exhibits low capacitance, low gate charge, and low turn-on and turn-off delay times. This makes the SI7403BDN-T1-GE3 a popular choice for high frequency power converters, such as PFCs, BR1 bridges, and other high current and high frequency applications such as motor drivers.

In terms of its operation, the SI7403BDN-T1-GE3 consists of three terminals, the source, which is the negative terminal, the drain, which is the positive terminal and the gate, which is the control terminal. In order for the MOSFET to be turned on, a positive voltage must be applied to the gate terminal, creating an inversion layer that makes the channel conductive. The amount of current that is allowed to flow between source and drain is controlled by the gate-source voltage (Vgs). As the voltage applied to the gate terminal becomes larger, more current is allowed to flow through. A relatively small voltage, typically 3-5V, can control up to 20A of current.

The SI7403BDN-T1-GE3 provides superior thermal performance, as it offers a maximum current of 20A with a maximum operating temperature of 175°C. It has a total package thermal resistance of just 1.7 deg C/W, making it very efficient at dissipating heat. Additionally, it has a wide range of gate charge values from 10nC to 250nC and on-state resistance of 0.095 Ohm, making it a high performance and reliable solution for many switching applications.

The SI7403BDN-T1-GE3 is a versatile and effiecient solution for many power management applications. Its versatile design allows it to be used in a wide variety of applications such as voltage control, power conversion, and switching. With its high performance, low capacitance, and low on-state resistance, the SI7403BDN-T1-GE3 is an excellent choice for power factor correction (PFC) circuits, motor drivers, and other high current, high frequency devices.

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