SI7439DP-T1-GE3

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The SI7439DP-T1-GE3 is a Single N-Channel Enhancement Mode Field Effect Transistor (FET), incorporating a DMOS (Double-diffused MOS) technology which ensures ESD (Electrostatic Discharge) protection. This FET is particularly suited for low voltage applications and is available in both SO-8EP (small outline-8 enhanced performance) and MSOP-8(micro small outline package) packages. This MOSFET can be used in a variety of applications where low power consumption, reliable operation, and small size are important considerations.

A FET is a type of transistor which controls an electrical signal by depending on the flow of current through the transistor, making it an ideal choice for low voltage applications. This particular device is designed using a Double-diffused MOS technology which is the combination of PMOS (positive MOSFET) and NMOS (negative MOSFET), allowing for better heat transfer across the device and providing ESD protection. The small size of the SI7439DP-T1-GE3 makes it ideal for applications such as battery operated portable electronic devices, automotive electronics, and industrial electronic systems.

The SI7439DP-T1-GE3 is a single N-Channel Enhancement Mode Field Effect Transistor (FET), which means it is a field effect transistor with one current path. This type of transistor is most often used in high frequency applications, because the switching speed is faster than that of a standard junction field effect transistor. This makes the SI7439DP-T1-GE3 an ideal choice for applications such as switching power supply, amplifier, PWM (Pulse Width Modulation) converter, and voltage regulator.

The working principle of the SI7439DP-T1-GE3 is based on the principle of “carrier storage”. In this process, the device stores negative electrons in the channel between the drain and the source. These electrons are then used to control the flow of current through the device. The amount of current that can be controlled is determined by the voltage applied to the gate of the FET. When a positive voltage is applied to the gate, a reverse electric field, which is created in the vicinity of the gate, attracts the stored electrons and causes them to move away from the drain towards the source. This decrease in the amount of stored electrons results in an increased current in the device.

The SI7439DP-T1-GE3 is capable of a maximum output current of 250mA, with a total gate-source capacitance of 5pF and a total gate charge of 4nC. The maximum drain-source breakdown voltage is 25V. This device has been designed with a low on-state resistance of 39mΩ, making it ideal for low voltage applications.

In addition to providing ESD protection and excellent heat transfer, the SI7439DP-T1-GE3 can also be used in reverse power spike protection circuits. The device is available in 8-pin SO-8EP (small outline-8 enhanced performance) and MSOP-8 (micro small outline package) packages, making it an ideal choice for applications requiring low power consumption, reliable operation, and small size.

The SI7439DP-T1-GE3 is a reliable, high-performance single-channel FET designed to operate at low voltage and low power consumption, making it suitable for a wide range of applications such as battery operated portable electronic devices, automotive electronics, and industrial electronic systems. With its low on-state resistance of 39mΩ, double-diffused MOS technology, ESD protection, and reverse power spike protection, the SI7439DP-T1-GE3 is an ideal choice for applications requiring low power consumption and reliable operation.

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