SI7459DP-T1-E3

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Transistors - FETs, MOSFETs - Single

Introduction to SI7459DP-T1-E3

The SI7459DP-T1-E3 is aN-Channel enhancement mode power MOSFET developed by Siliconix Incorporated. It is specifically designed as a low-cost, low-threshold device with low on-resistance. It is configured in an 8-lead Power SO-8 surface mount package.

The SI7459DP-T1-E3 is designed for applications such as PC motherboard control, switching power supplies, automobiles, telecommunications, and consumer electronics.

Features of SI7459DP-T1-E3

• Low on-resistance: RDS(ON) = 7.5mOhm at VGS (gate) = 10V
• Low Gate charge: Qg = 8nC
• Low Threshold Voltage: Vth = 4V
• Operating temperature range: -55°C to +175°C
• TTL level gate

Application fields of SI7459DP-T1-E3

The SI7459DP-T1-E3 is suitable for applications such as PC motherboard control, switching power supplies, automobiles, telecommunications, and consumer electronics. Its low on-resistance and low threshold voltage makes it an ideal choice for high current, low voltage applications. The low gate charge makes it suitable for use in high-speed systems and its low operating temperature range makes it an excellent choice for use in high power applications.

The SI7459DP-T1-E3 is also ideally suited for use in high-frequency switching applications. In addition, its TTL level gate makes it compatible with a wide variety of logic circuits and allows for direct, low-voltage control. This makes it an ideal choice for use in digital devices and systems that require low power and fast, reliable control.

Working principle of SI7459DP-T1-E3

The SI7459DP-T1-E3 is based on MOS technology which uses gate and source voltages to switch on and off the device. When a voltage is applied to the gate at a higher level than the source (in a voltage range of 4 to 10V), the MOSFET is switched on and allows current to flow. When the voltage is drawn away from the gate, the device is switched off.

The MOSFET has a low on-resistance of 7.5 mOhm when VGS (gate) = 10V. This makes it suitable for high current applications. The low gate capacitance of 8 nC makes it ideal for use in high-speed switching applications, as it does not require large gate drive voltages to turn on and off.

The low threshold voltage of 4V also allows for direct, low-voltage control, making it ideal for use in digital devices. For applications requiring higher power and switching speeds, the SI7459DP-T1-E3 can be used in conjunction with a driver IC such as the Siliconix AIJA or ETC N13003.

Conclusion

The SI7459DP-T1-E3 is an N-Channel enhancement mode power MOSFET designed for high current and low voltage applications. It is configured in an 8-lead Power SO-8 surface mount package with low on-resistance, low threshold voltage and low gate capacitance. These features make it well-suited for high current, low voltage applications, high frequency switching applications, and digital devices that require low power and fast, reliable control.

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