Allicdata Part #: | SI7445DP-T1-GE3-ND |
Manufacturer Part#: |
SI7445DP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 12A PPAK 1212-8 |
More Detail: | P-Channel 20V 12A (Ta) 1.9W (Ta) Surface Mount Pow... |
DataSheet: | SI7445DP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.9W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 7.7 mOhm @ 19A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI7445DP-T1-GE3 is a single MOSFET transistor, which is predominantly utilized for switching applications owing to its low drain-source on-resistance and low capacitance. The low power transistor delivers low gate charge for optimal switching speed. Moreover, the device is extremely versatile, able to function in both high side and low-side configurations via a logic-level gate. When combined with its extremely low threshold, this MOSFET transistor enables logic interfaced gate drive and easily integrates into logic compatible systems.
The SI7445DP-T1-GE3 operates through the application of a voltage that is greater than the threshold voltage to the gate terminal. This voltage is used to ‘open’ the potential barrier between the source and drain. During operation, the drain-source voltage allows for nearly zero resistance in the channel, permitting electrons to flow freely between the drain and source terminals. This ability to facilitate electron flow with very low resistance is a key factor to the efficiency of the device.
Applications of the SI7445DP-T1-GE3 are extremely varied, including level shifting applications, motor and relay control, power sequencing, input protection and many more. Additionally, owing to its lengthy list of properties, it is increasingly used in circuit boards in a variety of applications. The device can also be found in switching mode power supplies, as well as various computer components such as memory modules, controllers, and integrated circuits.
The SI7445DP-T1-GE3 is also embedded into any number of electronic systems to perform level shifting, providing protection against static voltages. This type of protection is extremely important when restoring sensitive circuits from temporary faults and restores them to the original state. In this case, the MOSFET transistor is used to serve as an overvoltage protector, monitoring the transient faults and providing protection in order to prevent any potential damage.
The SI7445DP-T1-GE3 is a very versatile device, with features suited for a range of applications. As a result, it is an excellent choice for engineers looking for an effective and reliable transistor for a wide range of applications. Not only does it offer low resistance between the drain and source, it also delivers smooth switching and greater power efficiency. Moreover, its gate input source is highly compatible with various levels of logic.
The specific data is subject to PDF, and the above content is for reference
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