SI7446BDP-T1-E3

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The SI7446BDP-T1-E3 is a N-channel Advanced Power MOSFET optimized for switching applications. It is rated using an SRC test structure that ensures its capabilities in a wide range of current and voltage conditions. Additionally, it has improved switching characteristics and ESD protection, as well as a wide range of features that make it suitable for a variety of applications.This MOSFET offers a maximum on resistance of 175 mΩ at 4.3 V and 0.2 A, making it ideal for use in low-voltage, low-current switching applications operating at frequencies up to 1 MHz. Additionally, it has a high peak gate charge of 4.35 V coupled with a low gate-to-drain capacitance of 1.2 pF, making it suited for switching applications operating at higher frequencies. In addition, it has a high avalanche energy rating of 700 mJ, making it suitable for use in high-voltage switching applications.The SI7446BDP-T1-E3 is also rated for a maximum of 350 mJ of ESD protection, which ensures that the device will not be damaged by electrostatic discharge. Additionally, it has a low leakage current of 10 nA, which is beneficial in applications that require low power consumption.In addition to addressing the challenges of effectively switching high voltage and current loads, the SI7446BDP-T1-E3 also provides protection against thermal runaway and electrostatic discharge. It has a sufficiently high avalanche rating to protect against thermal runaway, and its ESD protection rating helps assure that the device will not be damaged by ESD events. Its low on resistance, combined with its low gate-drain capacitance and gate charge characteristics, make it well-suited for low-voltage, low-current switching applications operating at frequencies up to 1 MHz.The SI7446BDP-T1-E3 is designed to operate within the temperature range of -55°C to 150°C, making it well-suited for use in a variety of environments. Additionally, it is rated for a maximum drain-source voltage of 60 V and provides a maximum drain current of 79.7 A, making it suitable for use in a variety of switching applications.The SI7446BDP-T1-E3 is a high-performance advanced power MOSFET that is well-suited for use in a variety of switching applications operating at frequencies up to 1 MHz. Its low on resistance and ESD protection rating make it ideal for use in low-voltage, low-current switching applications, while its high avalanche rating and low gate charge make it well-suited for high-voltage switching applications. Additionally, its temperature range and drain-source voltage rating make it suitable for a variety of environments.

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