Allicdata Part #: | SI7457DP-T1-E3-ND |
Manufacturer Part#: |
SI7457DP-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 100V 28A PPAK SO-8 |
More Detail: | P-Channel 100V 28A (Tc) 5.2W (Ta), 83.3W (Tc) Surf... |
DataSheet: | SI7457DP-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5.2W (Ta), 83.3W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5230pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 160nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 7.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI7457DP-T1-E3 is a high-performance, high-speed and low-noise circuit solution with a wide range of applications and a variety of optimized features. It is a modern, monolithic enhancement-mode trench MOSFET designed to be used in multiple applications.
The SI7457DP-T1-E3 provides superior performance in a variety of high-speed and high-frequency applications, such as personal computers and consumer electronics. Its low on-state resistance (RDS(on)), low gate charge (Qg) and high switching speed make it ideal for power switching and for providing efficient control of circuit operation. Additionally, it features an optimized design for superior dynamic performance and high-power switching.
The SI7457DP-T1-E3 is a single-transistor MOSFET optimized for power switching and high-frequency applications. It is manufactured using the latest silicon technology to provide superior performance from its high-speed and low-noise transistor. The MOSFET design ensures high efficiency and reliability while eliminating harmful voltage spikes. It has an on-state resistance that is low compared to other MOSFETs, so it offers superior electrical performance even when operating at high speeds.
The SI7457DP-T1-E3 is designed to work with high input and output impedances for applications in high-speed switching circuits. Its low on-state resistance (RDS(on)) and optimized transistors provide good noise immunity and fast switching times. Low gate capacitance (Qg) and high switching frequencies improve the dynamic performance of the MOSFET and reduce circuit power consumption. Additionally, its low threshold voltage provides low-voltage operation.
The SI7457DP-T1-E3 is widely used in multiple applications, including cellular phone power supplies, computer power supplies, switching power supplies, DC/DC converters, battery chargers, inverter circuits and audio amplifiers. Additionally, it is suitable for a variety of audio applications, such as power amplifiers and head-phone amplifiers, because of its high switching speed and low voltage operation.
The SI7457DP-T1-E3 is a modern transistor that provides improved performance, high speeds and low noise. Its wide range of applications, such as power switching and audio, make it an ideal choice for modern circuit design. Additionally, its optimized transistors and innovative design features make it the perfect choice for high performance and reliable power switching.
The specific data is subject to PDF, and the above content is for reference
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