SI7421DN-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI7421DN-T1-E3 is a type of transistor from the family of FETs and MOSFETs. This single-device is particularly suited for use in low-side, low-voltage, high-current switching applications. As some of its key features, this transistor is able to handle up to 10A (pulsed) and 12V of drain-to-source voltage. With a maximum on-state resistance of 0.48 ohm, it delivers high switching performance, combined to a low gate voltages (down to 1.8V).

In terms of applications, the SI7421DN-T1-E3 can find use in a variety of power switching circuits such as buck converters and high current DC motors. It is also suitable for use in automotive and other equipment powered by batteries and it provides protection functions in consumer applications such as cell phones and PDAs.

In addition to its main features and applications, let\'s dive a little deeper and take a closer look at the working principle of the SI7421DN-T1-E3. In a nutshell, this device is a voltage-driven simple bipolar transistor that switches from an OFF state to an ON state as the voltage applied to its Gate rises above the threshold voltage. In an OFF state, the Drain-Source voltage is equal to zero and the current is turned off completely. When the Gate voltage increases, the type of current sourced by the device changes from OFF-state current to on-state current in a very linear fashion.

In terms of its construction, the SI7421DN-T1-E3 includes separate terminals for the Gate and the Drain, as one would expect from FETs and MOSFETs. In addition to these, it also contains a Source terminal which is connected to the Drain internally. This allows for a low-side, low-voltage output, as well as a higher input gate voltages that correspond to the Drain-to-Source voltage.

In conclusion, the SI7421DN-T1-E3 is a single-device FETs and MOSFETs that is able to provide a high current output, with a low gate voltage requirement. Suited for use in a number of power switching circuits, this device offers several useful features that make it suitable for use in low-side, low-voltage applications.

The specific data is subject to PDF, and the above content is for reference