SI7447ADP-T1-E3

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	PowerPAK® 1212-8
Supplier Device Package:	PowerPAK® 1212-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	5.4W (Ta), 83.3W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4650pF @ 15V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	150nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	6.5 mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	35A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

The SI7447ADP-T1-E3 is a N-Channel MOSFET (metal oxide semiconductor field effect transistor) with a logic-level threshold voltage, designed and manufactured by Silicon Laboratories. It is designed to switch higher voltages of up to 55V and currents up to 5.1A. The device is housed in a leadless and inexpensive surface-mount package for optimal use in space-constrained and miniaturized applications. It is suited for high voltage, low power applications such as Intelligent motor control, LCD and LED lighting, White goods, and professional power amplifiers.

Working Principles

The SI7447ADP-T1-E3 is a single pulse-width modulation (PWM) type of MOSFET, which consists of a MOSFET in a TO-220, TO-252, or TO-263 package. The SI7447ADP-T1-E3 operates by using two different voltage thresholds. When the gate voltage is below the logic low threshold, the device is off, no current flows.Once the gate voltage is above the logic high threshold (typically,>12V for a standard gate-source voltage), the device is triggered and current is allowed to flow from source to drain, as long as the source-gate voltage is above the logic low threshold.

Application Field

Due to its lower gate-threshold voltage and higher drive current capability, the SI7447ADP-T1-E3 is ideal for many different applications. It can be used in a wide range of electronic circuits, from low-voltage logic circuits to high-power motor control and power management systems. The device is also ideal for DC-DC converters, power supplies, and power amplifiers.For example, the SI7447ADP-T1-E3 can be used to control the speed of a motor with a DC voltage supply. It can also be used in a switching power supply or to control high-current inductive loads. The SI7447ADP-T1-E3 is also suitable for use in many high power systems, including LCD and LED lighting, White goods, and professional power amplifiers.The SI7447ADP-T1-E3 also has a variety of other applications, such as in timer/repeater/gate circuits, DC-AC converters, synchronous rectifiers, and switch-mode power supplies. Its low gate-voltage threshold and higher current drive capabilities also make it suitable for use in many commercial, industrial, and automotive applications.

Conclusion

The SI7447ADP-T1-E3 is a single pulse-width modulation type of N-Channel MOSFET, designed to switch higher voltages and currents up to 55V and 5.1A. It is suited for high voltage, low power applications such as Intelligent motor control, LCD and LED lighting, White goods, and professional power amplifiers. The device also has a variety of other applications, such as in timer/repeater/gate circuits, DC-AC converters, synchronous rectifiers, and switch-mode power supplies. Due to its lower gate-threshold voltage and higher drive current capability, the SI7447ADP-T1-E3 is an ideal choice for many different applications, where it can be used to switch and control high-current inductive loads.

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