SI7464DP-T1-E3

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The SI7464DP-T1-E3 is a high-performance, high-side switch featuring an integrated charge pump for switch drive. This switch is suitable for a range of general-purpose applications, including lighting, power management, and data management. It has an IC supply voltage range of 4.75V to 18V, a P-channel MOSFET drive voltage range of 3V to 18V, and a control voltage range of 0V to 18V. In addition, it can switch up to 20A of load current and support a wide operating temperature range of -40°C to +125°C.

The SI7464DP-T1-E3 is a single N-Channel MOSFET with a built-in diode protection. It is designed as an ultra-low-RDS(on) device with a total gate charge of just 5nC and a low on-state resistance of less than 8mOhms. The device is optimized for operation with an oxide-free gate oxide, making it suitable for low-frequency to mid-frequency switch applications. The device features a proprietary Body diode flip-over protection and robust electrostatic discharge (ESD) protection. It also features a low-voltage reverse protection circuit that prevents damage from reversed supply voltages.

The working principle of the SI7464DP-T1-E3 is straightforward. It is essentially a voltage-driven switch with an integrated charge pump. When the control pin is given a logic high input, the built-in charge pump turns on and the gate is pulled up to the VGS voltage, turning on the MOSFET. This allows current to flow from the drain to the source. When the control pin is given a logic low input, the charge pump turns off and the gate voltage is pulled down to the VGS, turning off the MOSFET. This essentially blocks current from flowing from the drain to the source.

The SI7464DP-T1-E3 is a perfect choice for applications requiring high-speed, low state resistance switching such as automotive, computing and consumer electronics. Its low gate charge enables faster switching times and lower heat dissipation, making it ideal for high frequency applications. Additionally, the reverse protection and ESD protection features make the SI7464DP-T1-E3 a robust and reliable solution for high-current, high-side switch applications.

In summary, the SI7464DP-T1-E3 is a single N-Channel MOSFET with a wide range of application fields. It is designed as an ultra-low-RDS(on) switch with an integrated charge pump that allows for fast and low state resistance switching. The device is optimized for oxide-free operation, making it suitable for low-frequency and mid-frequency switch applications. Furthermore, it has a range of integrated protection features that make it a reliable and robust solution for high-current, high-side switch applications.

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