SI7495DP-T1-E3

Vgs(th) (Max) @ Id:	900mV @ 1mA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.8W (Ta)
FET Feature:	--
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	140nC @ 5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	6.5 mOhm @ 21A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	13A (Ta)
Drain to Source Voltage (Vdss):	12V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction
The SI7495DP-T1-E3 is a N-channel trench gate MOSFET that is intended for use in a wide variety of applications. It is designed to provide low on-state resistance, good thermal performance, and high voltage transfer characteristics. This makes it ideal for use in consumer and automotive systems requiring high switching power, such as high-power audio, lighting, and automotive power supplies. This article will discuss the application field and working principle of the SI7495DP-T1-E3.
Application Field
The SI7495DP-T1-E3 is designed for use in high-power applications that require high-efficiency performance. For example, it can be used in audio amplifiers and high-current power supply systems. It can also be used in automotive systems, such as motor controllers and body control modules, due to its ability to operate at high temperatures. In addition, it can be used in motor stress testing systems, as well as high-power emergency lighting systems. It is also suitable for use in other applications, such as power converters, switching power supplies, and battery chargers.
Working Principle
The SI7495DP-T1-E3 is a N-channel MOSFET. It operates by using the flow of electrons in between the source and the drain to create a channel in which the electrons can flow. This channel is called the “gate” and is created when the voltage between the gate and the source is applied. This voltage, termed the gate-source voltage, is controlled by the voltage applied to the gate lead. When this voltage is set at 0V, the MOSFET is “off”, meaning that no electrons will flow. Conversely, when the gate-source voltage is set to some higher voltage, the MOSFET is “on”, allowing for the flow of electrons. This is the basis for how the SI7495DP-T1-E3 operates. Due to its low on-state resistance, high voltage transfer characteristics, and good thermal performance, it is ideal for high-power applications.
Conclusion
The SI7495DP-T1-E3 is a N-channel MOSFET that is designed for use in high-power applications that require high-efficiency performance. Its low on-state resistance, good thermal performance, and high voltage transfer characteristics make it suitable for use in audio amplifiers and high-current power supplies, motor controllers and body control modules, motor stress testing systems, power converters, switching power supplies, and battery chargers. It is also suitable for use in emergency lighting systems. The working principle of the SI7495DP-T1-E3 revolves around the creation of a channel between the source and drain by applying a voltage to the gate lead. This channel allows for the flow of electrons, thus making it possible to control the device on and off.

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