SI7423DN-T1-E3

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Introduction

SI7423DN-T1-E3 is a single leakage-compensated protection field-effect transistor (FET) that offers fast switching action and high power handling capability. It is designed to provide superior performance and superior protection for a variety of applications. It is an ideal choice for portable and fixed power electronics applications.

Application Field

The applications of SI7423DN-T1-E3 include, but are not limited to, automotive, industrial, robotics, computer communication, electrical/electrical and powerful audio-frequency switching. It is also applicable for protecting against high voltages, heat, and external interference. SI7423DN-T1-E3 can be used in simple switching applications, such as in low and medium power MOSFET switches. It can also be used in high-frequency switching applications, such as in power electronics and audio-frequency switching.

Working Principle

The SI7423DN-T1-E3 protects the device by providing a temper-proof gate drive as high as 40V. Its self-protection mechanism limits its drain-source voltage to 20V, ensuring it can not be damaged. This is important in high-voltage applications. It also has an internal diode that can be turned on and off before the FET switch is turned on. This ensures that it cannot be damaged by voltage spikes or other external disturbance.

The leakage-compensated protection field-effect transistor of SI7423DN-T1-E3 operates on the principle of a ‘compensated field effect’; the gate drive is externally supplied, and modulated by a built-in compensation circuit. When the gate is driven, an electric field is produced which creates a point of contact with the switching device. This makes it possible to control the ON and OFF states with much greater precision, along with improved current and voltage characteristics. This, in turn, helps reduce the potential for damage to devices due to overcurrent or high voltage.

The switching speed of SI7423DN-T1-E3 is relatively high and shows good performance in high frequency applications, with a wide operating temperature range of –40°C to +85°C.This device’s maximum on-state resistance is only 5.4mΩ at 25°C, and a typical off-state resistance is 13Ω at 25°C, making it suitable for low-power switches.

Advantages

A major advantage of using this device is that it can be used in a wide range of applications, much more than just in traditional switch and power electronics. It has an exceptional switching performance even at high frequencies, without compromising power supply and low voltage characteristics. Furthermore, the device is designed with a temperature compensation feature and offers a high degree of immunity to external interference. This allows it to be used in applications where precision and reliability are critical. Additionally, it is a cost-effective solution that comes with a long life expectancy of 12 years.

Conclusion

In conclusion, the SI7423DN-T1-E3 is a single leakage-compensated protection field effect transistor that provides superior protection, fast switchingaction and high power handling capability. It offers a high degree of reliability and precision and can be used in a broad range of applications. It is cost-effective, long-lasting and has a wide operating temperature range, making it an ideal choice for many applications.

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