Allicdata Part #: | SI7446BDP-T1-GE3-ND |
Manufacturer Part#: |
SI7446BDP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 12A PPAK SO-8 |
More Detail: | N-Channel 30V 12A (Ta) 1.9W (Ta) Surface Mount Pow... |
DataSheet: | SI7446BDP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.9W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3076pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 19A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI7446BDP-T1-GE3 is a low on-resistance, high-speed, floating-channel, enhancement-mode power MOSFET. It enables a wide range of applications from portable devices, telecom, desktop and server power supplies, to industrial and automotive applications.
As a single-die transistor, the SI7446BDP-T1-GE3 uses a standard package size while allowing high current switching with low on-resistance. This type of transistor operates using enhancement-mode and is usually turned on with a gate-source voltage of 10 V or lower. It also has a wide enough gate-source voltage range for improved thermal survivability.
The SI7446BDP-T1-GE3 also features low internal capacitances and a fast switching time, making it perfect for high-frequency operation. The transistors have a low thermal resistance of 0.77 K/W, which increases the total device efficiency significantly. The device also features low diode forward voltage, making it suitable for controlling AC and DC power conversion.
The SI7446BDP-T1-GE3 can be used in Switchmode and Linear power supplies, solar panels, battery chargers, DC-DC converters, as well as motor control circuits. Its floating channel and low-cost offer excellent performance and value in Power and Motor Control applications.
The SI7446BDP-T1-GE3 is made with a special dielectric layer that helps protect the chip from electrostatic discharge. Its powerful body diode and tight parameter distribution allow for high reliability and consistent performance across the entire temperature range. The device also features enhanced protection against overvoltage and overcurrent events.
The SI7446BDP-T1-GE3 uses a planar MOSFET technology that enables very high switching frequencies. The device is capable of operating at high currents, enabling high power applications. When used with proper gate drive and thermal management, it can also operate at higher temperatures.
In summary, the SI7446BDP-T1-GE3 is a powerful MOSFET that can be used for a variety of applications. With low on-resistance, high-speed switching, and excellent protection features, the device is perfect for a wide range of industrial, automotive, and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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