
Allicdata Part #: | SI7463DP-T1-GE3TR-ND |
Manufacturer Part#: |
SI7463DP-T1-GE3 |
Price: | $ 1.95 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 40V 11A PPAK SO-8 |
More Detail: | P-Channel 40V 11A (Ta) 1.9W (Ta) Surface Mount Pow... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 1.95000 |
10 +: | $ 1.89150 |
100 +: | $ 1.85250 |
1000 +: | $ 1.81350 |
10000 +: | $ 1.75500 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.9W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 9.2 mOhm @ 18.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SI7463DP-T1-GE3 is a P-channel 33V 20a MOSFET with a typical RDSon of 0.50Ω. It belongs to a very versatile family of transistor devices, generally referred to as FETs or Field-effect Transistors (FETs). Commonly found in electronic components, these solid-state electronic switches use voltage to control current between two independent circuits. FETs are divided into two categories, metal-oxide-semiconductor FETs (MOSFETs or MOSFETs) and Junction FETs (JFETs). SI7463DP-T1-GE3 is a MOSFET, and is one of the most popular and widely used transistor devices in the electronics industry.
The MOSFET is a three-terminal device with a rather large gate capacitance and high-frequency response capable of switching at high speeds. It is a unipolar device, meaning it is able to conduct current in either a positive or negative direction and is largely unaffected by a negative voltage. The SI7463DP-T1-GE3 is also a power MOSFET, meaning it is specially designed for high power and switching applications. It is commonly used as a switch in high voltage, high current applications, and can be found in a variety of applications such as switching power supplies, inverters, and DC-DC converters.
The working principle behind the SI7463DP-T1-GE3 is based on the positive characteristics of MOSFETs. It utilizes a Gate, Source, and Drain component that allows the transistor to switch from off, to on, and off again repeatedly. The Source is the input voltage and is connected to the Gate through a Gate capacitor, which is the component that allows for the Gate voltage to be controlled. The Drain allows for current to flow out of the transistor when it is turned on.
When a gate voltage, denoted as VG, is applied to the gate, a depletion region is created, thus allowing current to flow from the source to the drain. The VG is then increased further to reach an \'on\' state in which a constant current continues to flow, thus allowing electric power to be timely switched on and off. The MOSFETs are designed to be unipolar in nature, meaning only one type of charge is used in operation. This also allows them to be used as switches in applications that require high current and power switching.
The SI7463DP-T1-GE3 MOSFET is a versatile device with a host of applications in the fields of power electronics, audio amplifiers, automotive, and other telecom applications. The robust construction and the excellent switching capabilities of the SI7463DP-T1-GE3 make it a reliable choice for many power switching applications. The device is offered in an industry standard SOT-223 package, making it easy to incorporate into existing systems. Its superior switching characteristics, operational stability, and robust construction make it an indispensable component in the field of power electronics.
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