SI7465DP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7465DP-T1-GE3TR-ND

Manufacturer Part#:

SI7465DP-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 60V 3.2A PPAK SO-8
More Detail: P-Channel 60V 3.2A (Ta) 1.5W (Ta) Surface Mount Po...
DataSheet: SI7465DP-T1-GE3 datasheetSI7465DP-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 64 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7465DP-T1-GE3 is a level-shifting, single N-Channel field effect transistor. It is commonly found in automotive applications and is used for low voltage power supply and battery charging systems. It has a very high on-state resistance, which makes it ideal for use in automotive power supply and battery charging systems.

The SI7465DP-T1-GE3 is a monolithic device with an N-Channel MOSFET in a very small package. It is used for level shifting operations in applications where accuracy and low-power consumption are essential. The device uses ESD protection structures to provide high levels of protection against electrostatic discharge. It also features a low-power working state which allows it to be used in battery-operated applications where power consumption is critical.

The SI7465DP-T1-GE3 is a versatile device which can be used in many different applications. It can be used to provide level shifting operations between different voltage levels, as well as for power management in automotive systems. It is also capable of providing power supply and battery charging operations in automotive systems.

The most important application of the SI7465DP-T1-GE3 is in automotive systems. It provides level shifting operations between different voltage levels and also provides power management in automotive applications. In automotive power systems, the device is used to supply DC power for the components of the car, such as the brakes, lights, and navigation system. The device also provides power supply and battery charging operations in automotive systems.

The working principle of the SI7465DP-T1-GE3 is based on the transistor action. The N-Channel MOSFET is used as the current control element. The N-Channel is biased in the OFF state, in this state, the N-Channel MOSFET is blocking the current flow from drain to source. When a voltage is applied to the gate, the N-Channel MOSFET will be turned on allowing current flow from drain to source. The transistor works as an amplifier, allowing it to control the current flow from the drain to source.

The SI7465DP-T1-GE3 is a very versatile device that can be used in many different applications. From automotive power systems to control circuits and power management operations, the SI7465DP-T1-GE3 is a great choice for low voltage power supplies and battery charging systems. It is also used in many other applications, such as level shifting operations, switching functions, and many other applications in automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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