SI7483ADP-T1-GE3

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SI7483ADP-T1-GE3 is a high-performance N-channel MOSFET that can be used in many applications. This device has a high-voltage breakdown Voltage of 600V and can withstand up to 100V for Reverse Voltage. The maximum drain current (ID) at 100V is 20A and the drain-source on-resistance of the device is 8.6mΩ. This MOSFET is also capable of working in high-frequency circuits. Its low gate Capacitance, Cgd, makes it ideal for switching applications. It also has a high Maximum Operating Temperature, of 175℃, that makes it suitable for use in temperature-sensitive applications. The SI7483ADP-T1-GE3 is mainly used in power management and power control applications. It can be used to switch alternating current or switching DC loads. It is also used in the automotive industry, typically in power converters and power amplifiers. It is also used in lighting and consumer electronics applications, in circuits that require high-efficiency switching and fast response times. The working principle of the SI7483ADP-T1-GE3 is based on the field effect-transistor (FET). When a voltage is applied to the gate of the MOSFET, it causes a current to flow between the drain and the source. This current is dependent on the voltage applied to the gate, and the properties of the device, such as its drain-source resistance. The MOSFET is connected to a circuit using two connections: the drain and the source. Between these two connections is the gate connection, through which a voltage is applied in order to switch on the FET. When the gate is left open (no voltage applied), no current flows between the drain and the source. However, when a voltage is applied to the gate, an electric field is formed around the gate, decreasing the resistance between the drain and the source, thus allowing a current to flow. When this electric field is present, the MOSFET behaves like a switch, allowing current to flow between the drain and the source when required. The amount of current that flows between the drain and the source is dependent on the voltage applied to the gate. The higher the voltage, the greater the current that is allowed to flow.The SI7483ADP-T1-GE3 is also a depletion-mode FET, meaning that it is normally ON, and must be switched off with a voltage applied to the gate. When no voltage is applied, a current will flow between the drain and the source and the MOSFET will be in a saturated state. In summary, the SI7483ADP-T1-GE3 is a high-efficiency N-channel MOSFET that is mainly used for power control and power management applications. It is based on the field effect-transistor (FET) working principle and can be used to switch alternating current and DC loads. Its high-voltage breakdown Voltage of 600V, drain-source on-resistance of 8.6mΩ and its Maximum Operating Temperature of 175℃ make it suitable for use in many applications.

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