SI7445DP-T1-E3

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	PowerPAK® 1212-8
Supplier Device Package:	PowerPAK® 1212-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.9W (Ta)
FET Feature:	--
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	140nC @ 5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	7.7 mOhm @ 19A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	12A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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<p>The SI7445DP-T1-E3 is a single junction field effect transistor (FET) designed for a wide range of applications. This high-performance device is suitable for driving low and medium power circuits, particularly in situations requiring fast switching speeds and low static power consumption. It has a maximum gate-source voltage of 12V and is capable of operating at temperatures up to 125&deg;C.</p><p>The SI7445DP-T1-E3 is a depletion-mode device: when a negative voltage is applied to the gate, the device switches off, and when a positive voltage is applied, it switches on. This enables the SI7445DP-T1-E3 to be used in applications where a normally-off switch is required.</p><p>The SI7445DP-T1-E3&apos;s applications include motor control circuits, high-frequency switching drives, and logic circuits. It is also well-suited for high-speed analog signal processing and RF signal amplification and matching. Thanks to its low power consumption, the SI7445DP-T1-E3 is highly suitable for use in portable devices.</p><p>The SI7445DP-T1-E3 features a high forward transfer gain, which improves the device&apos;s dynamic range. It also has a high-speed switching speed that enables fast signal processing. The device&apos;s low on-state resistance helps to reduce power consumption and improves its performance in high-current applications. Additionally, the device is highly reliable, with a 100% on resistance guarantee at the maximum operating temperature of 125&deg;C.</p><p>The SI7445DP-T1-E3 utilizes a number of technologies to enable extreme precision in switching applications. The device&apos;s process-optimized layout provides optimal uniformity and low-voltage leakage. It also features a low gate-drain capacitance, which helps to enhance the device&apos;s switching speed. The device&apos;s stability is further improved by its low-tolerance channel for improved precision.</p><p>The SI7445DP-T1-E3 is an excellent choice for high-performance, high-speed switching and signal processing applications. Its combination of low-power consumption, high-precision switching, and fast switching speed makes it an ideal choice for a wide range of applications.</p>

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