SI7461DP-T1-E3 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI7461DP-T1-E3 is an economical, robust and high performance single-pole, single-throw (SPST) enhancement-mode insulated gate bipolar transistor (IGBT) device. It is ideal for power switching applications, including commercial and industrial uses. The SI7461DP-T1-E3 provides a maximum VCEON rating of 800 volts, a maximum PCEON rating of 40 amps and a maximum on-state resistance (Rds(on)) of 0.12 ohms. This device features a low forward voltage drop, low gate drive voltage requirements and fast turn-on/off times. The SI7461DP-T1-E3 is available in two package sizes and is can be used for a variety of applications, including renewable energy, motor control, lighting solutions, protective systems and more.

An IGBT is similar to a field-effect transistor (FET) in terms of construction, but it differs from an FET in that it has an additional insulated gate and two active layers, forming an integrated structure. These components are arranged in parallel as a unit within an IGBT and enable bi-directional switching capability, providing excellent characteristics and performance. This device has a low on-resistance and fast switching characteristics, making it ideal for power switching applications where high-voltage, high-current and fast switching times are a priority.

The SI7461DP-T1-E3 is a low-cost, high-performance device with a maximum VCEON rating of 800 volts. It is widely used in power conversion and other power switching applications due to its high current capacity and low switching losses. This device is designed for use in a wide range of applications, including motor control, renewable energy, inverters, power supplies and more.

The SI7461DP-T1-E3 is designed to operate in an enhancement-mode, meaning that the FET will remain off unless a voltage is applied to the gate of the device, thus controlling the device’s power output. This device requires a maximum gate current of 5 mA and a gate-source voltage of 10V, making it ideal for low-power applications. In addition, the SI7461DP-T1-E3 offers a wide operating temperature range, making it suitable for use in a variety of environments. This device is available in package sizes of two and four terminals.

The SI7461DP-T1-E3 is a robust, reliable and cost-effective device, making it a popular choice for power switching and conversion applications. This device features a low on-resistance and fast switching speeds and is also easy to replace due to its low gate drive voltage requirements. The SI7461DP-T1-E3 is designed for use in a variety of applications, including motor control, renewable energy, inverters, power supplies and more. This device is available in two package sizes and has a wide operating temperature range, making it suitable for use in a variety of environments.

The specific data is subject to PDF, and the above content is for reference