SI7448DP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7448DP-T1-GE3-ND

Manufacturer Part#:

SI7448DP-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 20V 13.4A PPAK SO-8
More Detail: N-Channel 20V 13.4A (Ta) 1.9W (Ta) Surface Mount P...
DataSheet: SI7448DP-T1-GE3 datasheetSI7448DP-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
FET Feature: --
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 22A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI7448DP-T1-GE3 is a field effect transistor (FET). It is a unipolar device with three terminals: gate, drain, and source. In this type of FET, the current flows from the drain to the source and is controlled by the gate voltage. It is a single FET, with an N-channel version and a P-channel version.

The SI7448DP-T1-GE3 is a very popular device in the market due to its low on-resistance, high-voltage rating, low gate-charge, and low gate-voltage requirements. It is suitable for high-frequency applications up to 100 MHz.

Application Field of the SI7448DP-T1-GE3

The SI7448DP-T1-GE3 is well suited for high frequency switching applications. Its low gate to source capacitance and low input capacitance make it suitable for high speed logic circuits. It can also be used in motor control, solar energy conversion, and voltage regulation. Its high voltage rating and high on-state current makes it suitable for high power switching applications such as AC and DC motor control. Additionally, the device can be used for for broadband communication, medical imaging, and test equipment.

Working Principle of the SI7448DP-T1-GE3

The SI7448DP-T1-GE3 is a field effect transistor (FET). It contains a gate, a source, and a drain and works on the principle of controlling the current flow through the transistor with the application of a gate voltage. When a positive voltage is applied to the gate terminal, it creates an electric field, which attracts electrons from the drain and the source, allowing current to flow through the device. This phenomenon is known as “electron depletion”, or the “voltage-controlled” effect. When a negative voltage is applied to the gate, it creates an electric field which repels electrons from the drain and source, thus increasing the resistance and decreasing the current flow. This effect is known as “electron concentration”, or the “voltage-controlled” effect.

The SI7448DP-T1-GE3 is a unipolar device, meaning that it conducts current in one direction only. This feature is ideal for applications such as switching and motor control, as it does not require the use of a bidirectional control signal. In addition, it can handle significant power due to its high on-state current.

The SI7448DP-T1-GE3 is also well suited for high frequency switching applications due to its low gate and input capacitances. Its low gate-charge and low gate-voltage requirements make it an ideal choice for high speed, low power logic circuits. It can be used in a variety of applications, including motor control, solar energy conversion, voltage regulation, and broadband communication, making it a versatile and popular FET.

The specific data is subject to PDF, and the above content is for reference

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